期刊
IEEE ELECTRON DEVICE LETTERS
卷 36, 期 8, 页码 826-828出版社
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/LED.2015.2442293
关键词
Field effect transistors; HEMTs; microwave transistors; power transistors
资金
- U.K. Engineering and Physical Sciences Research Council through PowerGaN Project [EP/K0114471/1]
- ENIAC E2COGaN Project
- EPSRC [EP/K026232/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/K026232/1] Funding Source: researchfish
It is shown by simulation supported by experiment that a reduced surface field effect, associated with compensated deep acceptors, can occur in carbon doped GaN-on-Si power switching AlGaN/GaN transistors, provided there is a vertical leakage path from the 2DEG to the carbon-doped layer. Simulations show that this effect is not present in devices using iron-doped GaN buffers explaining the higher voltage capability of carbon-doped devices.
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