Ultrathin ALD-Al2O3 layers for Ge(001) gate stacks: Local composition evolution and dielectric properties

Charged Defect Quantification in Pt∕Al2O3∕In0.53Ga0.47As∕InP MOS Capacitors

(2011) R. D. Long et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices

(2010) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Origin and passivation of fixed charge in atomic layer deposited aluminum oxide gate insulators on chemically treated InGaAs substrates

(2010) Byungha Shin et al.   APPLIED PHYSICS LETTERS

Titania/Alumina Bilayer Gate Dielectrics for Ge MOS Devices: Frequency- and Temperature-Dependent Electrical Characteristics

(2010) Shankar Swaminathan et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

Hafnium oxide/germanium oxynitride gate stacks on germanium: Capacitance scaling and interface state density

(2009) Yasuhiro Oshima et al.   APPLIED PHYSICS LETTERS

Oxidant prepulsing of Ge (100) prior to atomic layer deposition of Al2O3: In situ surface characterization

(2009) Shankar Swaminathan et al.   APPLIED PHYSICS LETTERS

Impact of oxide defects on band offset at GeO2/Ge interface

(2009) M. Yang et al.   APPLIED PHYSICS LETTERS

Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)

(2009) Byungha Shin et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

First principles study of substoichiometric germanium oxides

(2009) Jan Felix Binder et al.   MICROELECTRONIC ENGINEERING

Point defects in Al2O3 and their impact on gate stacks

(2009) J.R. Weber et al.   MICROELECTRONIC ENGINEERING

Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

(2008) V. V. Afanas’ev et al.   APPLIED PHYSICS LETTERS

Evidence of low interface trap density in GeO2∕Ge metal-oxide-semiconductor structures fabricated by thermal oxidation

(2008) Hiroshi Matsubara et al.   APPLIED PHYSICS LETTERS

Ge-Interface Engineering With Ozone Oxidation for Low Interface-State Density

(2008) Duygu Kuzum et al.   IEEE ELECTRON DEVICE LETTERS

Chemical Bonding, Interfaces, and Defects in Hafnium Oxide∕Germanium Oxynitride Gate Stacks on Ge(100)

(2008) Yasuhiro Oshima et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today