Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)
出版年份 2009 全文链接
标题
Unpinned Interface Between Al[sub 2]O[sub 3] Gate Dielectric Layer Grown by Atomic Layer Deposition and Chemically Treated n-In[sub 0.53]Ga[sub 0.47]As(001)
作者
关键词
-
出版物
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 12, Issue 8, Pages G40
出版商
The Electrochemical Society
发表日期
2009-06-12
DOI
10.1149/1.3139603
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Temperature and frequency dependent electrical characterization of HfO2/InxGa1−xAs interfaces using capacitance-voltage and conductance methods
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