Detection of the insulating gap and conductive filament growth direction in resistive memories
出版年份 2015 全文链接
标题
Detection of the insulating gap and conductive filament growth direction in resistive memories
作者
关键词
-
出版物
Nanoscale
Volume 7, Issue 37, Pages 15434-15441
出版商
Royal Society of Chemistry (RSC)
发表日期
2015-08-26
DOI
10.1039/c5nr03314d
参考文献
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注意:仅列出部分参考文献,下载原文获取全部文献信息。- Thermometry of Filamentary RRAM Devices
- (2015) Eilam Yalon et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- On the direction of the conductive filament growth in valence change memory devices during electroforming
- (2015) D. Kalaev et al. SOLID STATE IONICS
- Field-Induced Nucleation in the Presence of a Metal Electrode
- (2015) V. G. Karpov et al. Physical Review Applied
- First response: Race against time
- (2014) Ed Yong NATURE
- Current Compliance-Dependent Nonlinearity in ${\rm TiO}_{2}$ ReRAM
- (2013) Florian Lentz et al. IEEE ELECTRON DEVICE LETTERS
- Nanoscale resistive switching devices: mechanisms and modeling
- (2013) Yuchao Yang et al. Nanoscale
- Switching kinetics of electrochemical metallization memory cells
- (2013) Stephan Menzel et al. PHYSICAL CHEMISTRY CHEMICAL PHYSICS
- On the Switching Parameter Variation of Metal-Oxide RRAM—Part I: Physical Modeling and Simulation Methodology
- (2012) Ximeng Guan et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
- (2012) Stefano Larentis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Simulation of multilevel switching in electrochemical metallization memory cells
- (2012) Stephan Menzel et al. JOURNAL OF APPLIED PHYSICS
- Nucleation and growth phenomena in nanosized electrochemical systems for resistive switching memories
- (2012) I. Valov et al. JOURNAL OF SOLID STATE ELECTROCHEMISTRY
- Evaluation of the local temperature of conductive filaments in resistive switching materials
- (2012) E Yalon et al. NANOTECHNOLOGY
- Memristive devices for computing
- (2012) J. Joshua Yang et al. Nature Nanotechnology
- Metal–Oxide RRAM
- (2012) H.-S. Philip Wong et al. PROCEEDINGS OF THE IEEE
- Emerging memories: resistive switching mechanisms and current status
- (2012) Doo Seok Jeong et al. REPORTS ON PROGRESS IN PHYSICS
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- Anatomy of a Nanoscale Conduction Channel Reveals the Mechanism of a High-Performance Memristor
- (2011) Feng Miao et al. ADVANCED MATERIALS
- Sub-nanosecond switching of a tantalum oxide memristor
- (2011) Antonio C Torrezan et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Model for the Resistive Switching Effect in $ \hbox{HfO}_{2}$ MIM Structures Based on the Transmission Properties of Narrow Constrictions
- (2010) Enrique A Miranda et al. IEEE ELECTRON DEVICE LETTERS
- A Degenerately Doped $\hbox{In}_{0.53}\hbox{Ga}_{0.47} \hbox{As}$ Bipolar Junction Transistor
- (2010) E. Yalon et al. IEEE ELECTRON DEVICE LETTERS
- Resistance switching in HfO2 metal-insulator-metal devices
- (2010) P. Gonon et al. JOURNAL OF APPLIED PHYSICS
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
- (2009) Rainer Waser et al. ADVANCED MATERIALS
- A unified model of nucleation switching
- (2009) M. Nardone et al. APPLIED PHYSICS LETTERS
- Switching dynamics in titanium dioxide memristive devices
- (2009) Matthew D. Pickett et al. JOURNAL OF APPLIED PHYSICS
- Resistive non-volatile memory devices (Invited Paper)
- (2009) Rainer Waser MICROELECTRONIC ENGINEERING
- Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior
- (2009) Dmitri B. Strukov et al. Small
- Evidence of field induced nucleation in phase change memory
- (2008) I. V. Karpov et al. APPLIED PHYSICS LETTERS
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- Field-induced nucleation in phase change memory
- (2008) V. G. Karpov et al. PHYSICAL REVIEW B
- InP Bipolar ICs: Scaling Roadmaps, Frequency Limits, Manufacturable Technologies
- (2008) M.J.W. Rodwell et al. PROCEEDINGS OF THE IEEE
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