期刊
APPLIED PHYSICS LETTERS
卷 94, 期 10, 页码 -出版社
AIP Publishing
DOI: 10.1063/1.3100779
关键词
phase change memories
A unified field-induced nucleation model provides a common mechanism for switching in chalcogenide phase change memory and related devices of arbitrary thickness. We employ the model to derive equations for the threshold and holding voltages in terms of material parameters and device thickness, which are in excellent agreement with previous measurements and our data.
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