Resistance switching properties of Ag/ZnMn2O4/p-Si fabricated by magnetron sputtering for resistance random access memory

Published 2015 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Resistance switching properties of Ag/ZnMn2O4/p-Si fabricated by magnetron sputtering for resistance random access memory
Authors
Keywords
ZnMn<sub>2</sub>O<sub>4</sub>, resistance switching, properties, RRAM, magnetron sputtering
Journal
JOURNAL OF WUHAN UNIVERSITY OF TECHNOLOGY-MATERIALS SCIENCE EDITION
Volume 30, Issue 6, Pages 1159-1162
Publisher
Springer Nature
Online
2015-12-17
DOI
10.1007/s11595-015-1288-1
References
View 5 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Find Funding. Review Successful Grants.

Explore over 25,000 new funding opportunities and over 6,000,000 successful grants.

Explore

Ask a Question. Answer a Question.

Quickly pose questions to the entire community. Debate answers and get clarity on the most important issues facing researchers.

Get Started
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.