Growth of lattice-matched InAlN/GaN on Si (111) substrate for ultraviolet photodiode application

AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation

(2012) T. Lalinský et al.   APPLIED PHYSICS LETTERS

Fabrication and characterization of n-In0.4Ga0.6N/p-Si solar cell

(2012) Binh-Tinh Tran et al.   SOLAR ENERGY MATERIALS AND SOLAR CELLS

Growth, Structural, and Electrical Characterizations of N-Polar InAlN by Plasma-Assisted Molecular Beam Epitaxy

(2011) Sansaptak Dasgupta et al.   Applied Physics Express

Growth of High-Quality In$_{0.4}$Ga$_{0.6}$N Film on Si Substrate by Metal Organic Chemical Vapor Deposition

(2011) Binh-Tinh Tran et al.   Applied Physics Express

Nearly lattice-matched InAlN/GaN high electron mobility transistors grown on SiC substrate by pulsed metal organic chemical vapor deposition

(2011) JunShuai Xue et al.   APPLIED PHYSICS LETTERS

Metal Organic Chemical Vapor Deposition Growth and Characterization of AlInN-Based Schottky Ultraviolet Photodiodes on AlN Template

(2011) Yusuke Sakai et al.   JAPANESE JOURNAL OF APPLIED PHYSICS

Characterization of AlInN/GaN structures on AlN templates for high-performance ultraviolet photodiodes

(2011) Yusuke Sakai et al.   JOURNAL OF APPLIED PHYSICS

Ultrahigh-Speed AlInN/GaN High Electron Mobility Transistors Grown on (111) High-Resistivity Silicon withFT= 143 GHz

(2010) Haifeng Sun et al.   Applied Physics Express

Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer

(2010) Suk Choi et al.   APPLIED PHYSICS LETTERS

MOVPE growth of InAlN/InGaN heterostructures with an intermediate range of In content

(2010) K. Sugita et al.   JOURNAL OF CRYSTAL GROWTH

Metalorganic Chemical Vapor Deposition and Material Characterization of Lattice-Matched InAlN/GaN Two-Dimensional Electron Gas Heterostructures

(2008) Makoto Miyoshi et al.   Applied Physics Express

Growth and fabrication of AlGaN/GaN HEMT based on Si(111) substrates by MOCVD

(2008) Weijun Luo et al.   MICROELECTRONICS JOURNAL