Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition Method

Published 2009 View Full Article

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Title
Fabrication and Properties of AlN Film on GaN Substrate by Using Remote Plasma Atomic Layer Deposition Method
Authors
Keywords
-
Journal
Electronic Materials Letters
Volume 5, Issue 2, Pages 83-86
Publisher
Springer Nature
Online
2009-07-15
DOI
10.3365/eml.2009.06.083

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