Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors

Title
Promising Solution Processed Lanthanide Films as High-k Gate Insulators for Low Voltage-Driven Oxide Thin Film Transistors
Authors
Keywords
-
Journal
ELECTROCHEMICAL AND SOLID STATE LETTERS
Volume 14, Issue 10, Pages H426
Publisher
The Electrochemical Society
Online
2011-07-28
DOI
10.1149/1.3617445

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