Physicochemical and Electrical Properties of LaLuO[sub 3]/Ge(100) Structures Submitted to Postdeposition Annealings

Gate Oxides Beyond SiO2

(2011) Darrell G. Schlom et al.   MRS BULLETIN

Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials

(2011) M. Heyns et al.   MRS BULLETIN

Atomic Layer Deposition of Dielectrics on Ge and III–V Materials for Ultrahigh Performance Transistors

(2011) Robert M. Wallace et al.   MRS BULLETIN

Very high-κ ZrO2 with La2O3 (LaGeOx) passivating interfacial layers on germanium substrates

(2008) G. Mavrou et al.   APPLIED PHYSICS LETTERS

Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

(2008) G. Mavrou et al.   JOURNAL OF APPLIED PHYSICS

High-k/Ge MOSFETs for future nanoelectronics

(2008) Yoshiki Kamata   Materials Today