Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure

Published 2009 View Full Article

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Title
Strain-reduced GaN thick-film grown by hydride vapor phase epitaxy utilizing dot air-bridged structure
Authors
Keywords
-
Journal
JOURNAL OF CRYSTAL GROWTH
Volume 311, Issue 10, Pages 3029-3032
Publisher
Elsevier BV
Online
2009-01-22
DOI
10.1016/j.jcrysgro.2009.01.071

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