Selective Epitaxial Growth on Germanium Nanowires via Hybrid Oxide-Stabilized/Vapor-Liquid-Solid Growth

The introduction low levels of oxygen during the vapor-liquid-solid growth (VLS) of germanium nanowires causes an oxide sheath to form at the catalyst/nanowire/vapor interface during growth. This results in extremely high aspect ratio nanowires due to the removal of homoepitaxial deposition and the finite energy required for heterogeneous nucleation of germanium on its oxide. With the removal of oxygen, the catalyzed oxide sheath terminates and conventional growth with finite sidewall deposition dominates subsequent growth. The successful transition between oxide-stabilized and conventional VLS regimes can be deliberately manipulated to grow finite conical nanowire segments with discontinuous changes in diameter.