4.7 Article

Facile Continuous Flow Injection Process for High Quality Long ZnO Nanowire Arrays Synthesis

Journal

CRYSTAL GROWTH & DESIGN
Volume 12, Issue 3, Pages 1055-1059

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/cg201316f

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Funding

  1. National Science Council [NSC 99-2221-E-011-123]

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This paper reports a facile continuous flow injection (CFI) process to synthesize high-quality long zinc oxide nanowire arrays (ZnO-NAs) using a hydrothermal method. In previous related studies, the photoluminescence (PL) spectra of ZnO-NAs synthesized using a batch process exhibit highly visible emission caused by defect structures. In contrast to the batch process, zinc oxide nanowire arrays grown using the CFI process can reduce the visible emission in PL spectra effectively, demonstrating the qualities of zinc oxide nanowire arrays as superior to those grown using a batch process. To understand the difference between batch processes and the CFI process, inductively coupled plasma atomic emission spectroscopy (ICP-AES) was used to analyze the zinc precursor concentration regarding growth duration. According to the concentration variation of both processes, we could determine that zinc precursor concentration is maintained at a constant level to promote ZnO-NAs growth continuously in the CFI process. Long ZnO nanowire arrays can be obtained easily using the CFI process. The results demonstrate that the CFI process is a facile process for growing high-quality long ZnO nanowire arrays.

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