Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire

Published 2011 View Full Article

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Title
Evidence for Dislocation Induced Spontaneous Formation of GaN Nanowalls and Nanocolumns on Bare C-Plane Sapphire
Authors
Keywords
-
Journal
CRYSTAL GROWTH & DESIGN
Volume 11, Issue 11, Pages 4900-4903
Publisher
American Chemical Society (ACS)
Online
2011-09-29
DOI
10.1021/cg200749w

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