High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors

Published 2010 View Full Article

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Title
High Growth Rate of 4H-SiC Epilayers on On-Axis Substrates with Different Chlorinated Precursors
Authors
Keywords
-
Journal
CRYSTAL GROWTH & DESIGN
Volume 10, Issue 12, Pages 5334-5340
Publisher
American Chemical Society (ACS)
Online
2010-11-13
DOI
10.1021/cg101288u

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