Journal
CRYSTAL GROWTH & DESIGN
Volume 10, Issue 9, Pages 4197-4202Publisher
AMER CHEMICAL SOC
DOI: 10.1021/cg1008335
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Funding
- Monte dei Paschi di Siena
- Ministero degli Affari Esteri
- EU [NODE 015783]
- FIRB [RBI-N067A39_002]
- Indo-Italian POC
- CSIR
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We report the Pd-assisted chemical beam epitaxy growth of zinc blende InAs nanowires which are grown on InAs(111)A substrates by employing Pd octane and hexadecyl thiolates as catalyst precursors. The structural properties of these nanowires are investigated by scanning and transmission electron microscopy. Furthermore, we demostrate the growth of InAs nanowires on patterned substrates by employing the Pd hexadecylthiolate precursors as a direct-write resist in electron beam lithography.
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