Microwave Dielectric Properties with Optimized Mn-Doped Ba0.6Sr0.4TiO3 Highly Epitaxial Thin Films

Pure and Mn doped Ba0.6Sr0.4TiO3 (0.5%, 2%) (BST) thin films were epitaxially grown on the (001) LaAlO3 using pulsed laser deposition. Microstructural characterizations indicate that the as-grown thin films have excellent single crystalline quality and epitaxial nature with an atomically sharp interface and an interface relationship of [100](film)//[100](LAO) and (001)(film)//(001)(LAO). Microwave dielectric property measurements indicate that the additional Mn doping can significantly enhance the microwave dielectric properties of the BST films.