Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System

Published 2008 View Full Article

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Title
Raman Studies of Carbon-Doped GaAs Layers Grown by a Metallic-Arsenic-Based Metalorganic Chemical Vapor Deposition System
Authors
Keywords
-
Journal
CRYSTAL GROWTH & DESIGN
Volume 8, Issue 2, Pages 704-706
Publisher
American Chemical Society (ACS)
Online
2008-01-17
DOI
10.1021/cg0607452

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