Article
Materials Science, Multidisciplinary
Qian Li, Heng Yuan, Mengdi Zhang, Weiqing Yan, Bin Liao, Xu Zhang, Minju Ying
Summary: The annealing effect on Er-implanted ZnO films under different conditions were systematically studied, showing that vacuum annealing significantly enhances the magnetization of the films and is correlated with an increase in oxygen vacancy concentration. The research provides clear evidence of the relationship between the enhancement of ferromagnetism and the increase of oxygen vacancies in Er-doped ZnO.
Article
Materials Science, Multidisciplinary
Salila Kumar Sethy, Kamatchi Jothiramalingam Sankaran, Prasanth Gupta, Joseph Palathinkal Thomas, Ajit Dash, John V. Kennedy, Kam Tong Leung, Ken Haenen
Summary: N- and P-co-ion implantation enhances the electrical conductivity of nanocrystalline diamond films and improves the microplasma illumination characteristics of the films. N ions induce nanographitic phases, while P ions lower the resistance at the diamond-to-Si interface, promoting effective electron transport and achieving improved MI properties.
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
(2023)
Article
Chemistry, Physical
Bhanu Priya, Priya Jasrotia, Indra Sulania, Raj Kumar, Jyoti, Ratnesh K. Pandey, Tanuj Kumar
Summary: The wettability of the surface of an active material affects its interaction with the electrolyte and electrode in electrochemical applications. This study evaluated the wettability of V2O5 by examining its surface properties. V2O5 thin films were grown on different substrates after N+ ion implantation, and the growth dynamics were analyzed in terms of surface morphology and fractal parameters. The results showed that the surface morphology and wettability of V2O5 are substrate-dependent and can be controlled using fractal parameters.
APPLIED SURFACE SCIENCE
(2023)
Article
Materials Science, Multidisciplinary
Hyeonjun Kong, Gowoon Kim, Joonhyuk Lee, Jinhyung Cho, Hyoungjeen Jeen
Summary: The study found that nitrogen can only remain in the lattice of epitaxial iron films at temperatures below 450 degrees Celsius, with significant reduction and lattice modification occurring at 450 degrees Celsius. This leads to increases in saturation magnetization and coercivity, likely due to the reduction of oxygen content at the surface and thinning of Fe2O3.
CURRENT APPLIED PHYSICS
(2021)
Article
Instruments & Instrumentation
S. B. Vishwakarma, S. K. Dubey, R. L. Dubey, I. Sulania, D. Kanjilal
Summary: Investigations have been conducted on the implanted SiO2 thin film after thermal annealing using various analytical techniques. The results revealed the absence of vacancy defects, variations in vibrational modes and the formation of new structures. The photoluminescence intensity of the annealed SiO2 samples was higher, with a decrease in non-radiative defect centers and an increase in radiative Si:SiO2 interface states. Additionally, the presence of silicon nanoclusters formed after annealing resulted in an additional radiative recombination peak. Furthermore, the formation of new SiOx structures was observed after thermal annealing.
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS
(2024)
Article
Materials Science, Multidisciplinary
Z. A. Y. Abdalla, E. G. Njoroge, M. Mlambo, S. V. Motloung, J. B. Malherbe, T. T. Hlatshwayo
Summary: Isothermal annealing studies were conducted on selenium-implanted silicon carbide at temperatures above 1200 degrees Celsius. Different implantation temperatures resulted in various effects, with isothermal annealing facilitating significant recrystallization. The migration behavior of selenium during annealing process showed significant variations.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
Article
Materials Science, Ceramics
Qian Li, Mengdi Zhang, Weiqing Yan, Yifan Zhang, Bin Liao, Xu Zhang, Minju Ying
Summary: In this study, N ions were implanted into ZnO and ZnAlO films to investigate the effects of doping on the structural and magnetic properties. The results showed that doped ZnO films exhibited ferromagnetic behavior at an appropriate carrier concentration. Additional Al doping significantly improved the ferromagnetic properties, while the optical band gap increased with increasing Al doping content.
CERAMICS INTERNATIONAL
(2022)
Article
Engineering, Electrical & Electronic
Apu Mondal, S. Pal, Suvadip Masanta, Sourabh Pal, Rajib Saha, Pravin Kumar, A. Singha, S. Chattopadhyay, D. Jana, A. Sarkar
Summary: The study found that rapid thermal annealing helps to maintain nitrogen at lattice positions, while conventional furnace annealing promotes nitrogen outdiffusion, also explaining the mechanism of nitrogen enrichment in ZnO.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Crystallography
Alan G. G. Jacobs, Boris N. N. Feigelson, Joseph A. A. Spencer, Marko J. J. Tadjer, Jennifer K. K. Hite, Karl D. D. Hobart, Travis J. J. Anderson
Summary: Selective area doping is crucial for modern devices. In this study, efficient silicon ion activation in GaN was achieved through symmetrical multicycle rapid thermal annealing. The activation efficiency and mobility improved with increasing annealing temperature. The results demonstrate efficient dopant activation with low unintentional doping, making it suitable for high-voltage, high-power devices. Additionally, high activation and mobility have been achieved with GaN on sapphire, which offers commercial potential due to its large-area and robust substrates.
Article
Chemistry, Physical
Caiyun Liu, Le Chen, Yun Kang, Xuemei Tang, Wei Gao, Hong Yin
Summary: This work investigates the effect of post-thermal annealing on the microstructure and electrical properties of the interfacial layer in c-BN films. It is found that the annealing causes a phase transition and re-orientation of the interfacial layers, leading to improved band gap and mobility of the film. Furthermore, the c-BN/Si heterojunction after annealing demonstrates rectifying performance at room temperature.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Materials Science, Multidisciplinary
Shao-Dong Cheng, Lu Lu, Lvkang Shen, Hong-Mei Jing, Ming Liu, Shao-Bo Mi
Summary: The study on the effect of post-annealing on CoFe2O4:MgO nanocomposite films revealed that post-annealing can influence the microstructure and magnetic properties of the nanocomposite films, leading to changes in the distribution of Co and the epitaxial strain state, as well as affecting the in-plane and out-of-plane saturation magnetization and coercivity.
Article
Physics, Applied
Yuhei Wada, Hidetoshi Mizobata, Mikito Nozaki, Takuma Kobayashi, Takuji Hosoi, Tetsu Kachi, Takayoshi Shimura, Heiji Watanabe
Summary: GaN-based metal-oxide-semiconductor (MOS) devices were fabricated through Mg-ion implantation and ultra-high-pressure annealing (UHPA), showing improved surface degradation during high-temperature annealing. However, the extremely low hole mobility at the GaN MOS interfaces may present an intrinsic obstacle for the development of such devices.
APPLIED PHYSICS LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Li Zhang, Yanqiu Liu, Renhuai Wei, Xiaotian Kong, Ping Li, Jiangying Yu, Kai Huang, Xuebin Zhu
Summary: In this study, epitaxial La0.7Sr0.3MnO3 thin films were successfully prepared by using an ultraviolet laser-assisted annealing technique. The films exhibited a specific epitaxial relationship and showed enhanced properties with increasing laser energy density.
JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS
(2022)
Article
Physics, Applied
Hironori Okumura, Yasuhiro Watanabe, Tomohiko Shibata, Kohei Yoshizawa, Akira Uedono, Hiroki Tokunaga, Shuuichi Koseki, Tadanobu Arimura, Sami Suihkonen, Tomas Palacios
Summary: We report on the diffusion of impurities in ion implanted AlN layers after thermal annealing. By annealing at 1600 degrees C, silicon and magnesium atoms were found to diffuse into the AlN layer, while less change was observed for germanium atoms. Silicon implantation resulted in the introduction of vacancy-related defects. Higher annealing temperatures (>1300 degrees C) reduced the vacancy-related defects and led to the diffusion of oxygen atoms from the substrate due to sapphire decomposition. By controlling the annealing temperature and the distribution of silicon and oxygen concentrations, we were able to achieve reproducible electrical conductance in silicon-implanted AlN layers.
JAPANESE JOURNAL OF APPLIED PHYSICS
(2022)
Article
Materials Science, Multidisciplinary
Ruikang Wang, Tianyi Yan, Chao Li, Wei Ren, Gang Niu, Zhuang-De Jiang, Chenying Wang, Ming Liu, Zuo-Guang Ye, Yijun Zhang
Summary: This study investigated the microstructure and solid-state reaction of Al2O3/ZnO nanolaminates using atomic layer deposition and post-annealing. The results show that the growth temperature and post-annealing temperature not only affect the crystallinity and preferred orientation of the nanocomposites, but also influence the interfacial diffusion and counter-diffusion of atoms, thereby affecting the solid-state reaction.
MATERIALS CHEMISTRY AND PHYSICS
(2022)
