4.5 Article

A first-principles study of the magnetic properties in boron-doped ZnO

Journal

CHINESE PHYSICS B
Volume 21, Issue 4, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/21/4/047504

Keywords

diluted magnetic semiconductors; ZnO; doping

Funding

  1. National Natural Science Foundation of China [50831002, 50971025, 51071022, 11174031]
  2. Beijing Nova Program, China [2011031]
  3. Beijing Natural Science Foundation, China [2102032]
  4. National Basic Research Program of China [2012CB932702]

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First-principles calculations based on density functional theory are performed to study the origin of ferromagnetism in boron-doped ZnO. It is found that boron atoms tend to reside at Zn sites. The induced Zn vacancy is a key factor for ferromagnetism in Zn1-xBxO (0 < x < 1) systems. The nearest oxygen atoms coordinated with the B-Zn vacancy pair show a few hole states in the 2p orbitals and induce magnetic moments. However, the configuration of two boron atoms inducing one Zn vacancy is nonmagnetic, with a lower formation energy than that of the B-Zn vacancy pair. This explains the difference between the theoretical and experimental magnetic moments.

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