Journal
CHINESE PHYSICS B
Volume 19, Issue 5, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1088/1674-1056/19/5/057802
Keywords
Ga vacancies; MOCVD; GaN; Schottky barrier photodetector
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Funding
- National Science Fund for Distinguished Young Scholars [60925017]
- National Natural Science Foundation of China [60836003, 60776047]
- National Basic Research Program of China [2007CB936700]
- National High Technology Research and Development Program of China [2007AA03Z401]
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The leakage current of GaN Schottky barrier ultraviolet photodetectors is investigated. It is found that the photodetectors adopting undoped GaN instead of lightly Si-doped GaN as an active layer show a much lower leakage current even when they have a higher dislocation density. It is also found that the density of Ga vacancies in undoped GaN is much lower than in Si-doped GaN. The Ga vacancies may enhance tunneling and reduce effective Schottky barrier height, leading to an increase of leakage current. It suggests that when undoped GaN is used as the active layer, it is necessary to reduce the leakage current of GaN Schottky barrier ultraviolet photodetector.
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