Article
Chemistry, Multidisciplinary
Xiaopan Song, Ting Zhang, Lei Wu, Ruijin Hu, Wentao Qian, Zongguang Liu, Junzhuan Wang, Yi Shi, Jun Xu, Kunji Chen, Linwei Yu
Summary: This research demonstrates a fabrication method for large-area stretchable electronics using silicon nanowire field effect transistors (SiNW-FETs). By utilizing the solid-liquid-solid mechanism, SiNW channels can be precisely grown onto elastomers and transferred onto large-area substrates. The SiNW-FETs exhibit high performance and stability, making them promising for future flexible display and wearable electronic applications.
Article
Materials Science, Multidisciplinary
A. Lale, A. Grappin, A. Lecestre, L. Mazenq, J. Launay, Pierre Temple-Boyer
Summary: A technological process was developed to integrate silicon-nanowire-based field-effect nanodevices on a silicon-on-insulator (SOI) substrate. The fabrication of SiNW-FET and SiNW-ISFET devices was achieved through a double reactive ion etching process and a gate process involving SiO2 thermal oxidation growth and Al2O3 atomic layer deposition. The devices exhibited excellent electrical characteristics and demonstrated sensitivity in pH analysis at the submicronic scale.
Article
Engineering, Electrical & Electronic
Gabriel L. Nogueira, Douglas H. Vieira, Rogerio M. Morais, Jose P. M. Serbena, Keli F. Seidel, Neri Alves
Summary: This study presents an electrolyte-gated vertical field-effect transistor based on spray-deposited zinc oxide/silver nanowire Schottky contact, operating effectively at sub-1 V bias without being affected by the electrolyte or cyclic voltammetry. The device exhibits a high I-ON/I-OFF ratio, on-current density and normalized transconductance, positioning the ZnO-EGVFET structure at the forefront of printed transistor development without requiring high-resolution patterns.
IEEE ELECTRON DEVICE LETTERS
(2021)
Article
Chemistry, Multidisciplinary
Yan Zhu, Qianhui Wei, Qingxi Jin, Gangrong Li, Qingzhu Zhang, Han Xiao, Tengfei Li, Feng Wei, Yingchun Luo
Summary: In this paper, a simple mixed-catalyzer layer modified silicon nanowire field-effect transistor biosensor was proposed, which enabled direct detection of glucose with low-charge in high ionic strength solutions. The biosensor showed high sensitivity, strong specificity, and fast real-time response.
Article
Nanoscience & Nanotechnology
Pravinraj Selvaraj, Shi-Jie Chen, Yu-Han Cheng, Ming-Han Chi, Sreeshyam Adat, Yu-Wu Wang
Summary: This study investigates the growth of ZnO nanowires on ZTO-based FETs to develop a superior photosensitive self-powered photodetector. The resulting device exhibits high sensitivity and long carrier lifetime. Highly sensitive photodetectors based on ZTO/ZnO NW transistors are expected to have critical applications in various fields.
ACS APPLIED NANO MATERIALS
(2023)
Article
Engineering, Electrical & Electronic
Rui Shen, Yifan Jiang, Xuan Li, Jiamin Tian, Shuo Li, Tong Li, Qing Chen
Summary: This study demonstrates a method to improve the performance of InAs NW field-effect transistors by passivating the NW surface with a ferroelectric polymer, and observes synaptic behavior for the first time. By successfully simulating synaptic functions, this approach can achieve low-power, high-speed, and biomimetic plasticity artificial synapses.
ACS APPLIED ELECTRONIC MATERIALS
(2022)
Article
Chemistry, Analytical
Alex C. Tseng, Kensuke Ito, David Lynall, Igor G. Savelyev, Marina Blumin, Shiliang Wang, Harry E. Ruda, Toshiya Sakata
Summary: The trapping of environmental charges in surface states can dominate electrical transport in nanostructured field-effect transistors used as sensors, leading to exceptional sensitivity. However, the time dependencies on experimental timescales can result in hysteresis of FET conductance and signal instability. While hysteresis is usually suppressed by chemical surface treatments, it can also be studied as a source of information for ion sensing.
SENSORS AND ACTUATORS B-CHEMICAL
(2021)
Article
Chemistry, Physical
Hao Zhan, Xinfeng Tan, Guoxin Xie, Dan Guo
Summary: The study found that load-dependent frictional behavior occurs at the tip-membrane interface during nanoindentation tests, and the curve hysteresis can be well explained by stick-slip behavior. Frictional energy dissipation mainly occurs along the direction parallel to the cantilever beam, and the different frictional behavior on monolayer and multilayer 2D materials is mainly attributed to in-plane membrane stiffness.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2021)
Article
Electrochemistry
Chi-Chang Wu
Summary: In response to the COVID-19 pandemic, a polycrystalline silicon nanowire field-effect transistor (NWFET) was developed to detect the spike protein of SARS-CoV-2. The biosensor demonstrated high sensitivity and stability, making it a promising tool for rapid screening of the virus.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
(2022)
Article
Materials Science, Biomaterials
Koel Sinha, Ananya Chakraborty, Zishan Ahmed, Piyali Mukherjee, Priyanka Dutta, Chitrangada Das Mukhopadhyay, Chirasree RoyChaudhuri
Summary: This study presents a method for ultrasensitive detection of serotonin using direct molecular imprinting on the surface of three-dimensional zinc oxide nanorod devices. The method allows for real-time, rapid, and affordable detection, and shows significant potential for clinical translation.
ACS BIOMATERIALS SCIENCE & ENGINEERING
(2023)
Article
Engineering, Electrical & Electronic
Guangming Qu, Siyuan Xu, Lining Liu, Minglei Tang, Songhao Wu, Chunyang Jia, Xingfei Zhang, Wurui Song, Young Jin Lee, Jianlong Xu, Guodong Wang, Yuanxiao Ma, Ji-Hyeon Park, Yiyun Zhang, Xiaoyan Yi, Yeliang Wang, Jinmin Li
Summary: In this work, a normally-on single-monocrystal beta-Ga2O3 nanowire back-gate field-effect transistor (FET) was successfully demonstrated. The FET showed a high on/off ratio and low leakage current density. However, the on/off ratio rapidly degraded at high temperatures due to the activation of self-trapped holes and intrinsic vacancy-related defects, leading to an increase in channel leakage current.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Chemistry, Analytical
Abhiroop Bhattacharjee, Thanh Chien Nguyen, Vivek Pachauri, Sven Ingebrandt, Xuan Thang Vu
Summary: Using silicon nanowire field-effect transistors (SiNW-FETs) for impedance sensing shows potential for label-free detection of biomolecules by overcoming the Debye-screening limitation. Employing an electronic circuit model in SPICE, we quantitatively evaluated the influence of various device parameters on the transfer function of the SiNW-FETs and investigated how biomolecule binding affects impedance spectra. Mathematical analysis and simulation results led to proposed methods for improving the impedimetric readout of SiNW-FET biosensors.
Article
Engineering, Electrical & Electronic
Hao Xue, Ye Shao, Jongwon Yoon, Takhee Lee, Wu Lu
Summary: The low-frequency noise characteristics of ZnO nanowire field-effect transistors (FETs) were studied at temperatures ranging from 10 K to 293 K. The noise mechanisms include carrier number fluctuation (CNF) and mobility fluctuation, varying with temperature. The Hooge's parameter extracted ranged from 10(-3) to 10(-2) in different temperature ranges.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Review
Chemistry, Analytical
Pan Zhang, Yin Xiao, Jingjing Zhang, Bingjie Liu, Xiaofei Ma, Yong Wang
Summary: This comprehensive review discusses recent advances in FET gas sensors based on various materials, including sensor structures, gas-sensing mechanisms, optimization strategies, and key advances in gas sensing performance of the materials. Shortcomings of these materials are also addressed, along with proposed future directions in the field.
ANALYTICA CHIMICA ACTA
(2021)
Article
Chemistry, Multidisciplinary
Yuye Kang, Shengqiang Xu, Kaizhen Han, Eugene Y-J Kong, Zhigang Song, Sheng Luo, Annie Kumar, Chengkuan Wang, Weijun Fan, Gengchiau Liang, Xiao Gong
Summary: This study demonstrates Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3nm nanowire width, as well as investigates quantum confinement effects in extremely scaled GeSn nanowires. The results suggest that Ge0.95Sn0.05 p-GAAFETs exhibit good performance and are suitable for further scaling in future technology nodes.
