☆ 4.5 Article

Characteristics of high-quality HfSiON gate dielectric prepared by physical vapour deposition

Chinese Physics B (2009)

Journal

Chinese Physics B

Volume 18, Issue 2, Pages 768-772

Publisher

IOP Publishing

DOI: 10.1088/1674-1056/18/2/059

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Categories

Physics, Multidisciplinary

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