4.6 Article

Clustering effects in plasma-assisted chemical fluid deposition of copper: Similarities between deposition rate and density fluctuation

Journal

CHEMICAL PHYSICS LETTERS
Volume 502, Issue 4-6, Pages 173-175

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ELSEVIER
DOI: 10.1016/j.cplett.2010.12.038

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Funding

  1. Japan Ministry of Education, Culture, Sports, Science and Technology (MEXT)
  2. Japan Society of Promotion of Science (JSPS)/MEXT
  3. Murata Science Foundation

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Copper films are deposited on a silicon substrate using plasma-assisted chemical fluid deposition (P-CFD) in supercritical carbon dioxide (scCO(2)). The deposition rate at the center (peak) of the deposited circle-shape film, as a function of environmental pressure at the constant temperature and current, shows a peak near the pressure of the density fluctuation maximum; indicating clustering effects in P-CFD. (C) 2010 Elsevier B.V. All rights reserved.

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