Silicon nitride deposited by laser assisted plasma enhanced chemical vapor deposition for next generation organic electronic devices

Title
Silicon nitride deposited by laser assisted plasma enhanced chemical vapor deposition for next generation organic electronic devices
Authors
Keywords
Silicon nitride, Laser Assisted Plasma Enhanced Chemical Vapor Deposition (LAPECVD), Organic light emitting diode (OLED), Passivation, 193 nm argon fluoride(ArF) laser, Plasma damage
Journal
APPLIED SURFACE SCIENCE
Volume 541, Issue -, Pages 148313
Publisher
Elsevier BV
Online
2020-11-02
DOI
10.1016/j.apsusc.2020.148313

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