High on/off ratio p-type field-effect transistor enabled by a single heavily Al-doped α-Si3N4 nanowire

P-type 3C-SiC nanowires and their optical and electrical transport properties

(2011) Youqiang Chen et al.   CHEMICAL COMMUNICATIONS

Improved performance of ZnO nanowire field-effect transistors via focused ion beam treatment

(2011) Zhi-Min Liao et al.   NANOTECHNOLOGY

Substantial band-gap narrowing of α-Si3N4 induced by heavy Al doping

(2011) W. Xiao et al.   PHYSICS LETTERS A

Silicon Nitride Gate Dielectrics and Band Gap Engineering in Graphene Layers

(2010) Wenjuan Zhu et al.   NANO LETTERS

Vertical Transistor with Ultrathin Silicon Nitride Gate Dielectric

(2009) Maryam Moradi et al.   ADVANCED MATERIALS

Template- and catalyst-free synthesis, growth mechanism and excellent field emission properties of large scale single-crystalline tubular β-SiC

(2009) H. Cui et al.   CHEMICAL COMMUNICATIONS

Morphology Instability of Silicon Nitride Nanowires

(2009) Huatao Wang et al.   Journal of Physical Chemistry C

Fabrication of Ion-Implanted Si Nanowire p-FETs

(2008) Seung-Yong Lee et al.   Journal of Physical Chemistry C