Article
Physics, Multidisciplinary
Dipshika Das, Rudra Sankar Dhar, Pradip Kumar Ghosh
Summary: This research investigates the performance evaluation of a double gate TFET (DGTFET) by employing a hetero-dielectric gate structure featuring distinct high-K dielectrics with different work functions in a dual-material gate configuration. The findings reveal that by optimizing the work functions of the auxiliary and tunnel gates, the OFF current can be reduced, ambipolar phenomena can be minimized, and the tunnel rate can be enhanced.
Article
Materials Science, Multidisciplinary
Zhenchuan Lu, Kamale Tuokedaerhan, Haotian Cai, Hongguo Du, Renjia Zhang
Summary: This article introduces the sol-gel method for depositing La2O3 thin films on n-type Si substrates and quartz substrates, with a focus on the impact of annealing temperature on the microcomposition, surface morphology, optical properties, and band characteristics of the films. The results show that annealing leads to the formation of a hexagonal-phase La2O3 and new impurities. The La2O3 film exhibits a smooth, uniform surface without cracks, and its transmittance is above 75%. The calculated band offset of the La2O3 film meets the minimum requirements for MOS devices, indicating its promising prospects in MOS applications.
Article
Chemistry, Multidisciplinary
Kibret A. Messalea, Nitu Syed, Ali Zavabeti, Md Mohiuddin, Azmira Jannat, Patjaree Aukarasereenont, Chung K. Nguyen, Mei Xian Low, Sumeet Walia, Benedikt Haas, Christoph T. Koch, Nasir Mahmood, Khashayar Khoshmanesh, Kourosh Kalantar-Zadeh, Torben Daeneke
Summary: A stoichiometric cubic polymorph of 2D antimony oxide (Sb2O3) was synthesized as an ideal high-k dielectric sheet using a low-temperature, substrate-independent, silicon-industry-compatible liquid metal synthesis technique. The obtained alpha-Sb2O3 exhibited high crystallinity, wide band gap of approximately 4.4 eV, and a maximum relative permittivity of 84 with a breakdown electric field of around 10 MV/cm. The isolated 2D alpha-Sb2O3 nanosheets showed promise as gate oxides for conventional and van der Waals heterostructure-based electronics due to low leakage currents in top-gated field-effect transistors.
Article
Physics, Applied
Cong Wang, Yurong Liu, Baozi Wu, Jian Sui
Summary: The study has used double-stacked gate dielectrics (DSGD) to enhance the electrical performance of zinc oxide thin-film transistors (ZnO-TFT) with single-layer NbLaO gate dielectric (SLGD). Compared to ZnO-TFT with SLGD, the ZnO-TFTs with DSGD have shown significant improvement in electrical performance, particularly for the device with NbLaO/SiO2 DSGD, with increased field-effect mobility, on/off current ratio and reduced subthreshold slope. The enhanced performance is attributed to low surface roughness and trap-state density in the bulk of the channel and at the ZnO/NbLaO interface. These findings suggest the potential application of ZnO-TFTs with DSGD in high-resolution flat panel displays.
MODERN PHYSICS LETTERS B
(2023)
Article
Engineering, Electrical & Electronic
Yan-Lin Li, Kuei-Shu Chang-Liao, Chen-Chien Li, Chin-Hsiu Huang, Shang-Fu Tsai, Cheng-Yuan Li, Zi-Qin Hong, Hsin-Kai Fang
Summary: The effects of high-k gate stacks and plasma treatments on the electrical and reliability characteristics of FinFET were comprehensively studied in this work. Different gate stack materials and plasma treatments were shown to achieve higher ON-current, higher ON-/OFF-current ratio, smaller subthreshold swing, and lower gate leakage current in FinFETs, leading to significant improvements in performance and reliability.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2021)
Article
Chemistry, Multidisciplinary
Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu, Sarthak Das, Fabio Bussolotti, Rainer Lee, Siew Lang Teo, Ding Huang, Ivan Verzhbitskiy, Zhuojun Jiang, Zhuoling Jiang, Jianwei Chai, Shi Wun Tong, Zi-En Ooi, Calvin Pei Yu Wong, Yee Sin Ang, Chit Siong Lau, Kuan Eng Johnson Goh
Summary: This study reports the use of large-area liquid-metal-printed ultrathin Ga2O3 dielectrics for 2D electronics and optoelectronics. The conformal nature of liquid metal printing enables atomically smooth Ga2O3/WS2 interfaces. The compatibility of atomic layer deposition with Ga2O3/HfO2 top-gate dielectric stacks on monolayer WS2 is demonstrated, achieving small equivalent oxide thicknesses and subthreshold swings. These results show that liquid-metal-printed oxides can fill a crucial gap in dielectric integration of 2D materials.
Article
Nanoscience & Nanotechnology
Yuxiao Fang, Chun Zhao, Ivona Z. Mitrovic, Cezhou Zhao
Summary: Radiation hardness is crucial for electronics in harsh radiation environments. Solution-processed ZrLaO thin films exhibited excellent radiation resistance, making them a promising candidate for large-area electronic devices.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Computer Science, Information Systems
Nour El I. Boukortt, Trupti Ranjan Lenka, Salvatore Patane, Giovanni Crupi
Summary: The impact of changing the fin width, fin height, gate dielectric material, and gate length on the performance of a 3D 14nm SOI n-FinFET was analyzed using a calibrated TCAD model. A new device configuration was proposed based on optimal values obtained from the analysis, leading to significant improvements in electrical characteristics.
Article
Engineering, Electrical & Electronic
Deepa Bhatt, Siddhartha Panda
Summary: The study focused on pH sensing of double-gate ion-sensitive field-effect transistors with hafnium oxide and a stack of hafnium oxide/yttrium oxide, resulting in high pH sensitivity. Diffusion of hafnium and yttrium into gallium was identified as a key factor in improving the sensitivity of the pH sensor.
ACS APPLIED ELECTRONIC MATERIALS
(2021)
Article
Multidisciplinary Sciences
Yaohui Sun, Shengrong Xie, Chaowen Wu, Junqi Cui, Dongdong Chen, Fangfang Guo, Zaisheng Jiang, Yuxin Ren, Weiyong Lu
Summary: To reduce the filling cost of HWBM in mining backfill and improve the recycling utilization of coal fly ash, ultra-fine fly ash (UFA) was added as a partial replacement in this study. Experiments were conducted to investigate the effect of UFA on the mechanical properties of HWBM under different curing conditions. The results showed that the addition of UFA decreased the strength of HWBM, but improved its residual strength. Moreover, UFA dosage less than 15% effectively restrained the carbonation process and increased the weathering resistance of HWBM.
SCIENTIFIC REPORTS
(2023)
Article
Chemistry, Physical
Y. X. Ma, X. D. Huang, P. T. Lai, W. M. Tang
Summary: This study investigates the application of Nd oxynitrides and Ta-doped Nd oxynitrides as gate dielectrics in organic thin-film transistors. The results show that Ta doping can improve the performance of the transistors, including high carrier mobility and small threshold voltage, and enhance the smoothness and moisture resistance of the dielectric surface.
APPLIED SURFACE SCIENCE
(2022)
Article
Chemistry, Multidisciplinary
Pin Zhang, Yao Yao, Wenke Zhou, Yawen Liu, Xiaowei Cao, Zhi Zhang
Summary: This study explores a new composite absorbing material based on reduced graphene oxide and NiMnO3, which significantly improves the electromagnetic wave dissipation ability and impedance matching ratio. It achieves full coverage of electromagnetic waves and is an ideal material for electromagnetic wave protection.
Article
Materials Science, Ceramics
Zhi Zheng, Bingliang Liang, Jing Gao, Jianyi Ren, Zhiyong Liu, Xue Hou, Jianhui Sun, Shenghua Mei
Summary: In this study, the dielectric properties of (FeCoCrMnZn)3O4 under high pressure were systematically investigated. It was found that high pressure has a significant impact on the dielectric properties, even without observed phase transition. The electric resistance decreases exponentially with increasing pressure, while the relative permittivity decreases linearly. Additionally, the dielectric relaxation behavior of (FeCoCrMnZn)3O4 under high pressure was revealed.
CERAMICS INTERNATIONAL
(2023)
Article
Polymer Science
Ching-Lin Fan, Hou-Yen Tsao, Yu-Shien Shiah, Che-Wei Yao, Po-Wei Cheng
Summary: This study proposed using a high-K PVA/low-K PVP bilayer structure as the gate insulator to enhance a pentacene-based organic thin-film transistor. The bilayer gate dielectric with a dielectric constant of 5.6 resulted in increased gate capacitance and drain current. The device performances were significantly improved, with the field-effect mobility increasing from 0.16 to 1.12 cm(2)/(Vs), 7 times higher than that of the control sample.
Article
Engineering, Electrical & Electronic
Kaushal Nigam, Satyendra Kumar, Dharmender
Summary: This article investigates the impact of temperature variations on the performance of a dual material stack gate oxide-source dielectric pocket-tunnel-field-effect transistor (DMSGO-SDP-TFET). The analysis includes both DC and analog/radio-frequency performance parameters, as well as linearity parameters relevant for linear and analog/radio-frequency applications. The proposed DMSGO-SDP-TFET demonstrates lesser sensitivity towards temperature variation compared to conventional DMSGO-TFETs, making it suitable for low-power switching and biosensing applications at elevated temperatures.
JOURNAL OF COMPUTATIONAL ELECTRONICS
(2022)
