期刊
CARBON
卷 50, 期 10, 页码 3854-3858出版社
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.carbon.2012.04.027
关键词
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资金
- Kyung Hee University [KHU-20110451]
- Basic Science Research Program through the National Research Foundation of Korea (NRF)
- Ministry of Education, Science and Technology [2011-0013066]
- National Research Foundation of Korea [2011-0013066] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
We demonstrate a field-effect nonvolatile random access memory (NVRAM) device made of a graphene nanoribbon (GNR) and a multiferroic epitaxial BiFeO3 thin film. The GNR and the source/drain electrodes were formed by position-controlled dip-pen nanolithography. The NVRAM device exhibited asymmetric hysteresis behavior originating from the combination of the p-type semiconducting behavior of the GNR and the ferroelectric hysteresis of the BiFeO3 layer. The memory window of the NVRAM device was significantly improved by a NH3 annealing process which changed the p-type GNR to n-type. (c) 2012 Elsevier Ltd. All rights reserved.
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