Article
Optics
Longheng Qi, Peian Li, Xu Zhang, Ka Ming Wong, Kei May Lau
Summary: A prototype of full-color micro-LED micro-display with a pixel density of 391 ppi is demonstrated using InGaN/AlGaInP heterogeneous integration. This display shows the feasibility and prospects of high brightness, good color performance, and high-resolution micro-LED micro-displays in future metaverse applications.
LIGHT-SCIENCE & APPLICATIONS
(2023)
Article
Chemistry, Multidisciplinary
Hua-Chiang Wen, Ssu-Kuan Wu, Cheng-Wei Liu, Jin-Ji Dai, Wu-Ching Chou
Summary: The nanotribological properties of AlxGa1-xN epitaxial films grown on low-temperature-grown GaN/AlN/Si substrates were investigated. It was found that the Al compositions played a crucial role in determining the strength of bonding forces and shear resistance. The measured friction coefficient (mu) values decreased with increasing Al compositions, indicating a transition from brittleness to ductility in the AlxGa1-xN system.
Article
Physics, Applied
Yoshinobu Matsuda, Souta Funato, Mitsuru Funato, Yoichi Kawakami
Summary: In this study, InGaN quantum wells were fabricated on GaN microlens structures using a thermal reflow method. The peak emission wavelengths were found to shift from approximately 490 nm at the top of the microstructure to approximately 400 nm at the bottom. This shift was attributed to the distribution of In composition caused by the continuously changing off-angles from the (0001) plane. The results suggest that both stable and unstable planes can be utilized for InGaN-based microstructures with multiwavelength emission properties.
APPLIED PHYSICS EXPRESS
(2022)
Article
Optics
Jacob J. Ewing, Cheyenne Lynsky, Matthew S. Wong, Feng Wu, Yi Chao Chow, Pavel Shapturenka, Michel Iza, Shuji Nakamura, Steven P. Denbaars, James S. Speck
Summary: This article studied the method of achieving highly efficient long-wavelength InGaN LEDs through V-defect engineering, which utilized naturally occurring V-defects for lateral injection and improved the external quantum efficiency.
Review
Engineering, Electrical & Electronic
Daisuke Iida, Kazuhiro Ohkawa
Summary: GaN-based light-emitting devices have the potential to achieve all visible emissions, and they play an important role in micro-LED displays. This review focuses on the development of III-nitride red LEDs and highlights key techniques, such as growth and doping.
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
(2022)
Article
Crystallography
C. R. Tait, S. R. Lee, J. Deitz, M. A. Rodriguez, D. L. Alliman, B. P. Gunning, G. M. Peake, A. Sandoval, N. R. Valdez, P. R. Sharps
Summary: Progress has been made in the synthesis of semimetal Cd3As2 by metal-organic chemical-vapor deposition (MOCVD), with optimized growth conditions revealing that InAs-terminated substrates yield the most desirable results. Advanced imaging techniques and x-ray diffraction modalities have been utilized to extensively study the microstructure of Cd3As2 thin films, showing smooth and specular surfaces with low roughness. The films exhibit strain relaxation and belong to the P4(2)/nbc space group, positioning MOCVD-grown Cd3As2 as a Dirac semimetal of interest for topological quantum materials research.
JOURNAL OF CRYSTAL GROWTH
(2021)
Article
Crystallography
M. Zimmer, A. Trachtmann, M. Jetter, P. Michler
Summary: Low areal density InGaAs quantum dots suitable for single-photon applications are fabricated on a GaAs substrate by MOVPE. AFM measurements reveal a low QD density of 3.2 x 10^7 cm(-2) for a high V/III ratio of 360. The InGaAs QDs are embedded into a pin-LED structure with an oxide aperture for targeted electrical excitation. Low temperature electroluminescence measurements confirm the electrical excitation of a single QD.
JOURNAL OF CRYSTAL GROWTH
(2023)
Article
Optics
Panpan Li, Hongjian Li, Yifan Yao, Haojun Zhang, Cheyenne Lynsky, Kai Shek Qwah, Mike Iza, James S. Speck, Shuji Nakamura, Steven P. DenBaars
Summary: This work presents fully transparent metal organic chemical vapor deposition (MOCVD)-grown InGaN cascaded micro-light-emitting diodes (mu LEDs) with independent junction control. The cascaded mu LEDs allow independent control of carrier injection into blue, green, and blue/green junctions in the same device, showing high optical and electrical performance. The efficient tunnel junctions and fully activated p-type GaN in the cascaded mu LEDs demonstrate the important application of tunnel junctions for integrating mu LEDs with multiple color emissions.
Article
Chemistry, Physical
Do-Yeong Shin, Taehwan Kim, Ozgun Akyuz, Hilmi Volkan Demir, In-Hwan Lee
Summary: This study presents an improved efficiency design for white LEDs by integrating blue nanorod LEDs with green and red-emitting perovskite nanocrystal films. The design utilizes the localized surface plasmon effect of Ag@SiO2 nanoparticles to enhance the photoluminescence intensity of blue LEDs, while the high-power blue LED backlight improves the perovskite photoluminescence intensity. The resulting white LED with Ag@SiO2 nanoparticle-embedded nanorods demonstrates a 62% increase in photoluminescence intensity compared to planar white LEDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Crystallography
J. -P. Duchemin
Summary: This paper presents the author's personal view on the development of LP-MOVPE, which occurred in the late 70s and early 80s at Thomson CSF in France. Pioneering work performed by the author and his colleagues led to the successful growth of various sophisticated devices using LP-MOVPE, overcoming basic hurdles and proving their ongoing significance.
JOURNAL OF CRYSTAL GROWTH
(2023)
Review
Materials Science, Multidisciplinary
Zhaojun Liu, Byung-Ryool Hyun, Yujia Sheng, Chun-Jung Lin, Mengyuan Changhu, Yonghong Lin, Chih-Hsiang Ho, Jr-Hau He, Hao-Chung Kuo
Summary: Micro-light-emitting diodes (Micro-LEDs) based on gallium nitride (GaN) materials offer versatile platforms for various applications, including displays, data communication tools, photodetectors, and sensors. By combining with quantum dots, Micro-LEDs can achieve efficient full-color displays and high-speed visible light communications.
ADVANCED MATERIALS TECHNOLOGIES
(2022)
Article
Chemistry, Physical
Pojung Lin, Jiazhe Liu, Hongche Lin, Zhiyuan Chuang, Wenching Hsu, Yiche Chen, Poliang Liu, Rayhua Horng
Summary: In this study, GaN-based epitaxial structures were grown on high-resistivity silicon (HRSi) substrates by met-alorganic chemical vapor deposition. The p-type parasitic channels generated at the interfaces of the aluminum nitride (AlN) nucleation layers and HRSi substrates were characterized. A 2-nm thick silicon nitride (SiNx) layer was used to suppress the Al diffusion and prevent the generation of p-type parasitic channels. The insertion loss of the optimized structure was only 0.04 dB/mm higher than that of the annealed HRSi substrate at 10 GHz.
SURFACES AND INTERFACES
(2023)
Article
Optics
Jie Zhao, Yu Yin, Renfeng Chen, Xiang Zhang, Junxue Ran, Hao Long, Junxi Wang, Tongbo Wei
Summary: In this Letter, the fabrication of three dimensional truncated-hexagonal-pyramid (THP) vertical light emitting diodes (VLEDs) with white emission grown on beta-Ga2O3 substrate is described. The longitudinal growth rate of the 3D n-GaN layer increases with decreasing N-2 flow rate and increasing H-2 flow rate. The 3D THP VLED effectively suppresses the quantum-confined Stark effect (QCSE) and improves the internal quantum efficiency (IQE), while reducing the V-shaped pits. Furthermore, the 3D THP VLED achieves multiwavelength emission and better light extraction efficiency (LEE), offering a promising approach for phosphor-free white LED devices.
Article
Nanoscience & Nanotechnology
K. Khan, S. Diez, Kai Sun, C. Wurm, U. K. Mishra, E. Ahmadi
Summary: This study reports the observation of self-assembled InGaN/(In)GaN superlattice structure in InGaN film grown on N-polar GaN substrate, with varying In content in each layer depending on growth temperature. By increasing the substrate temperature, a periodic structure was achieved, offering a new pathway for designing and fabricating electronic and optoelectronic devices with enhanced performance.
Article
Physics, Applied
Abu Bashar Mohammad Hamidul Islam, Tae Kyoung Kim, Dong-Soo Shin, Jong-In Shim, Joon Seop Kwak
Summary: This study investigates the effect of current stress on InGaN/GaN multiple-quantum-well flip-chip blue micro light-emitting diodes (mu-LEDs) and reveals the mechanisms of defect aggregation and generation that cause changes in the optoelectronic performance of the devices. The aging test shows that the improvement in crystal quality due to defect aggregation initially enhances the light output power and external quantum efficiency (EQE), but the generation of sidewall point defects eventually leads to performance degradation. The findings highlight the importance of both defect aggregation and generation in understanding the degradation mechanisms of mu-LEDs.
APPLIED PHYSICS LETTERS
(2022)
Article
Nanoscience & Nanotechnology
Jacob Deneff, Kimberly S. Butler, Paul G. Kotula, Braden E. Rue, Dorina F. Sava Gallis
Summary: Zeolitic imidazolate framework (ZIF) nanoparticles have emerged as attractive platforms for various biologically relevant applications due to their facile synthesis, tailorable porosity, diverse compositions, and low toxicity. This study demonstrates the rapid synthesis and size tunability of ZIF-20 particles, their stability in biologically relevant media, biocompatibility with A549 human epithelial cells, and ability to encapsulate and release methylene blue. ZIF-20 NPs display unique behavior based on their specific structural and chemical features, highlighting the importance of expanding the design space within the broader ZIFs family for a wider range of relevant properties in biological applications and beyond.
ACS APPLIED MATERIALS & INTERFACES
(2021)
Article
Optics
Xiongliang Wei, Syed Ahmed Al Muyeed, Haotian Xue, Elia Palmese, Renbo Song, Nelson Tansu, Jonathan J. Wierer
Summary: This study demonstrates the near-infrared electroluminescence of InGaN quantum dots (QDs) formed through controlled growth on photoelectrochemical (PEC) etched QD templates. The QD template consists of PEC InGaN QDs with high density and controlled sizes, with an AlGaN capping layer and a GaN barrier layer. The growth process and materials used effectively prevent the collapse and maintain the integrity of the QDs. The electroluminescence results show a significant shift in wavelength, attributed to the unique structure and material properties of the SK QDs.
PHOTONICS RESEARCH
(2022)
Article
Materials Science, Multidisciplinary
Michael A. Melia, Samantha G. Rosenberg, Paul G. Kotula, Florent Bocher, Rebecca F. Schaller
Summary: This study investigated the oxidation behavior of 316 L stainless steel samples fabricated by different manufacturing processes in a supercritical CO2 environment. The results showed that the additively manufactured 316 L stainless steel samples exhibited lower oxidation due to the protective effect of a thick Cr rich Mn silicate oxide covering the surface.
Article
Engineering, Electrical & Electronic
Ioannis E. Fragkos, Wei Sun, Damir Borovac, Renbo Song, Jonathan J. Wierer, Nelson Tansu
Summary: This study investigates an active region design based on InGaN / delta-InN quantum well (QW) for potential high-efficiency visible light emitters. The results demonstrate a large wavelength redshift and an increase in the electron-hole wavefunction overlap for the delta-structure compared to the conventional InGaN QW.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2022)
Article
Physics, Condensed Matter
Simeon J. Gilbert, Samantha G. Rosenberg, Paul G. Kotula, Thomas G. Kmieciak, Laura B. Biedermann, Michael P. Siegal
Summary: In this study, metal-insulator interfaces within granular metal films were investigated, and their interfacial interactions were found to affect the structural and electrical transport properties. The results provide insights into the broad range of conductivities reported in the literature.
JOURNAL OF PHYSICS-CONDENSED MATTER
(2022)
Article
Materials Science, Multidisciplinary
Giovanni Esteves, Joseph Bischoff, Ethan W. S. A. Schmidt, Mark G. Rodriguez, Samantha G. Rosenberg, Paul Kotula
Summary: The formation of Al3Sc in 100 nm Al0.8Sc0.2 films is driven by exposure to high temperature through higher deposition temperature or annealing. The crystallinity of the films affects the film resistivity, while the deposition on template layers influences the orientation of crystalline Al3Sc.
Article
Chemistry, Physical
Chang Li, Abhinandan Shyamsunder, Alexis Grace Hoane, Daniel M. Long, Chun Yuen Kwok, Paul G. Kotula, Kevin R. Zavadil, Andrew A. Gewirth, Linda F. Nazar
Summary: This study introduces a novel additive that effectively solves the issues in aqueous zinc-metal batteries, leading to excellent cycling performance and efficient zinc deposition.
Article
Physics, Applied
Michael J. Abere, Matthew T. Beason, Robert V. Reeves, Mark A. Rodriguez, Paul G. Kotula, Catherine E. Sobczak, Steven F. Son, Cole D. Yarrington, David P. Adams
Summary: In this study, highly controlled nanolaminates of NiO-Al were fabricated using sputter deposition, and the variations of ignition and high-temperature reactions were investigated. It was found that the bilayer thickness and heating rate have influences on the ignition behavior and reaction velocities. The elimination of a passivating Al oxide layer on the powder can lower the reaction activation energy.
JOURNAL OF APPLIED PHYSICS
(2022)
Article
Chemistry, Multidisciplinary
Eric Lang, Kory Burns, Yongqiang Wang, Paul G. Kotula, Andrew B. Kustas, Sal Rodriguez, Assel Aitkaliyeva, Khalid Hattar
Summary: High-Entropy Alloys (HEAs) are proposed as materials for extreme environments, but the effects of radiation on their performance are not well understood. In this study, the response of additively manufactured refractory high-entropy alloys (RHEAs) to helium ion bombardment is investigated, revealing the interplay between alloy composition and helium bubble size and density.
Article
Materials Science, Multidisciplinary
Frank W. DelRio, Scott J. Grutzik, William M. Mook, Sara M. Dickens, Paul G. Kotula, Eric D. Hintsala, Douglas D. Stauffer, Brad L. Boyce
Summary: In this letter, we demonstrated stable nanoscale fracture in single-crystal silicon and identified the shape of the crack-growth resistance curve, role of fabrication-induced artifacts, and origin of fracture surface features.
MATERIALS RESEARCH LETTERS
(2022)
Article
Chemistry, Physical
Scott A. McClary, Daniel M. Long, Ana Sanz-Matias, Paul G. Kotula, David Prendergast, Katherine L. Jungjohann, Kevin R. Zavadil
Summary: This study demonstrates that ionically nonconductive materials can form cation-transmissive interphases in calcium metal batteries, and the conductivity can be tailored through control of heterogeneity, providing a method to stabilize reactive metal electrodes.
ACS ENERGY LETTERS
(2022)
Article
Engineering, Electrical & Electronic
Haotian Xue, Syed Ahmed Al Muyeed, Elia Palmese, Daniel Rogers, Renbo Song, Nelson Tansu, Jonathan J. Wierer
Summary: The recombination rates in red-emitting InGaN LEDs were studied to understand their efficiency limitations. The use of high Al-content AlyGa(1-y)N interlayers resulted in smoother surfaces and higher photoluminescence efficiency. IL-MQWs grown on SL-ULs showed lower A coefficients, indicating reduced defect formation. Compared to shorter wavelength InGaN-based LEDs, the B coefficients were significantly lower due to lower wavefunction overlap, while A and C coefficients were higher due to a higher number of defects.
IEEE JOURNAL OF QUANTUM ELECTRONICS
(2023)
Article
Chemistry, Physical
Xiongliang Wei, Syed Ahmed Al Muyeed, Haotian Xue, Jonathan J. J. Wierer
Summary: Traditional methods for synthesizing InGaN quantum dots often result in low density and non-uniform size distribution. Photoelectrochemical etching with coherent light has been developed to overcome these challenges. The anisotropic etching of InGaN thin films using PEC etching is demonstrated, with the heights of the quantum dots being more uniform at a lower applied potential.
Article
Engineering, Electrical & Electronic
Liron Shvilberg, Takanori Mimura, Haotian Xue, Jonathan J. Wierer Jr, Elizabeth A. Paisley, Helge Heinrich, Jon F. Ihlefeld
Summary: A robust dielectric insulating layer for wide bandgap semiconductor devices is a challenge, and magnesium oxide shows promise as a suitable material for integration with gallium nitride (GaN). However, large area growth and smooth growth surfaces remain obstacles. This study presents the results of epitaxial growth of magnesium oxide on n-type GaN, showing low leakage currents and low interface state densities, indicating that the interfacial phase is not detrimental to the interfacial electronic properties of MOSCap devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2023)
Article
Nanoscience & Nanotechnology
Simeon J. Gilbert, Melissa L. Meyerson, Paul G. Kotula, Samantha G. Rosenberg, Thomas G. Kmieciak, Michael P. McGarry, Michael P. Siegal, Laura B. Biedermann
Summary: Understanding and controlling nanoscale interface phenomena is crucial for optimizing electronic devices. In this study, we demonstrate that granular metals (GMs) can be used to evaluate the role of secondary phases at interfaces. We investigated SiN (x) as an alternative insulator for GMs and found that Mo-SiN (x) had reduced metal-silicide formation and lower conductivity. XPS measurements indicate that metal-silicide and metal-nitride formation can be controlled in Mo-SiN (x). SiN (x) also provides a pathway to metal-nitride nanostructures for various applications.
Article
Crystallography
Jianzheng Hu, Long Yan, Ning Zhou, Yao Chen, Xiaoni Yang, Lianqiao Yang, Shiping Guo
Summary: The effect and mechanism of carrier gas velocity, V/III ratio, and carrier gas velocity match on the growth rate of AlN were investigated in this study. The results showed that the growth rate of AlN initially increased with hydrogen flow rate, reached saturation, and then decreased monotonically. The turning point value depended on the equipment and process. By increasing the MO VM, the growth rate of AlN could be improved, but the uniformity deteriorated due to turbulence and loss of uniform boundary layer. High quality AlN films were successfully grown on nano-patterned sapphire substrates with improved crystalline quality and atomic smooth surfaces.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Tingting Ma, Yang Li, Kangning Sun, Qinglin Cheng, Sen Li
Summary: This study investigates the melting process and nucleation behavior of sodium crystals using molecular dynamics simulation. The results show good agreement between simulated and experimental values for the melting temperature, density, and radial distribution function of sodium. The diffusion coefficient of liquid sodium increases linearly with temperature, and the homogeneous nucleation rate of melting in superheated sodium crystal exponentially increases with temperature. The findings provide theoretical support for applications involving heat and mass transfer in sodium-related systems.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Hisato Nishii, Shintarou Iida, Akira Yamasaki, Takumi Ikenoue, Masao Miyake, Toshiya Doi, Tetsuji Hirato
Summary: Epitaxial V2O3 films were fabricated on sapphire substrates using mist chemical vapor deposition (mist CVD) method, eliminating the need for high vacuum conditions. The films can be grown on sapphire substrates even under atmospheric pressure, with the optimal growth temperature at 823 K. The films grown at 823 K exhibit a metal-insulator transition at approximately 155 K. The film on C-plane sapphire exhibits a lower transition temperature compared to those on R- and A-plane sapphire substrates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Jani Jesenovec, Kevin Zawilski, Peter Alison, Stephan J. Meschter, Sambit K. Saha, Andrew J. Sepelak, Peter G. Schunemann
Summary: In this study, NiSb needles were successfully formed in InSb by manipulating the growth rate and adding NiSb. These needle structures in InSb can be used to tune the magnetoresistance of devices. Additionally, undoped InSb crystals demonstrated good infrared transmission at low growth rates.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
D. Joseph Daniel, P. Karuppasamy, H. J. Kim
Summary: The 2-amino 4-methyl pyridinium oxalate (2A4MPO) compound was synthesized and its crystal structure, functional groups, thermal stability, electrical properties, and third-order nonlinear optical properties were studied. The results demonstrate that the synthesized crystal has good structural integrity, thermal stability, and potential for third-order nonlinear optical applications.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
C. W. Lan
Summary: The past two decades have witnessed a significant transformation in solar silicon crystal growth, especially in the competition between multi-crystalline silicon (Multi-Si) and mono-crystalline silicon (Mono-Si). The demand for this crucial material has exponentially surged, with silicon solar panels capturing over 95% of the global PV market share. The advancements in crystal growth technology during this period have set historical benchmarks, with the market share shifting from high-performance multi-crystalline silicon (HPM-Si) to CZ silicon.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peiyao Hao, Lili Zheng, Hui Zhang
Summary: A novel design of argon gas tube for removing impurities during silicon ingot growth was developed, and numerical simulations showed that it can effectively extract SiO.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Geetika Sahu, Chanchal Chakraborty, Subhadeep Roy, Souri Banerjee
Summary: This article discusses the novel fractal nature of hydrothermally synthesized MoS2 QDs. By adjusting the reaction time, the study found that the average size of QDs increases and then decreases with longer reaction times. STEM images indicate that shorter reaction times lead to sheet formation, while extended reaction times cause sheets to fragment into QDs.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Pengjian Lu, Wei Huang, Junjun Wang, Haitao Yang, Shiyue Guo, Bin Li, Ting Wang, Chitengfei Zhang, Rong Tu, Song Zhang
Summary: A systematic study on the tetramethylsilane-hydorgen (TMS-H-2) system for the deposition of pure single-crystal SiC by high-temperature chemical vapor deposition (HTCVD) method is conducted. The study investigates the effect of temperature, pressure, and H-2:TMS ratio on the deposition conditions and provides a theoretical basis and guidance for improving the quality and cost of industrial production of single-crystal SiC.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Xinyu Jiang, Liangliang Liu, Yanqing Liu, Yan Wang, Zhaoping Hou
Summary: Investigation on the preparation of anisometric templated textured high entropy or multi-element doped ferroelectric ceramics was conducted using A-site disordered niobate microcrystals. The effects of process parameters on the morphology and chemical composition were studied, and the photocatalytic properties of the microcrystals were evaluated.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Mobashsara Tabassum, Md. Ashraful Alam, Sabrina Mostofa, Raton Kumar Bishwas, Debasish Sarkar, Shirin Akter Jahan
Summary: In this study, high crystallinity copper nanoparticles were synthesized by altering the reaction medium at low temperatures. The results show that changing the reaction medium can reduce the surface energy of precursors and promote the formation of highly crystalline copper nanoparticles.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Ivan Bodnar, Vitaly V. Khoroshko, Veronika A. Yashchuk, Valery F. Gremenok, Mohsin Kazi, Mayeen U. Khandaker, Tatiana I. Zubar, Daria I. Tishkevich, Alex Trukhanov, Sergei Trukhanov
Summary: This work presents the production of single crystals of Cu2ZnGeSe4, a semiconducting quaternary compound, using a gas chemical method with iodine as a transporter. The phase state, crystal structure, and lattice constants of the synthesized samples were refined and determined. The band gap of Cu2ZnGeSe4 was calculated using transmission spectrum and it was found that the band gap increases by 12% with decreasing temperature in the range of 20-300 K.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Timur Malin, Igor Osinnykh, Vladimir Mansurov, Dmitriy Protasov, Sergey Ponomarev, Denis Milakhin, Konstantin Zhuravlev
Summary: The effect of growth temperature on the buffer leakage currents of GaN-on-Si layers was investigated. It was found that higher growth temperature results in lower leakage currents. The defects in GaN layers grown at different temperatures were studied using photoluminescence technique, and a correlation between leakage currents, structural perfection, and donor concentration in GaN-on-Si layers was established. It was also observed that reduced growth temperature leads to the formation of inversion domains.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Thi-Hoai-Thu Nguyen, Jyh-Chen Chen
Summary: The effect of heater power control on heat, flow, and oxygen transport for CCz crystal growth was studied. Shorter upper side heater design could improve crystal quality and growth, but with higher power consumption.
JOURNAL OF CRYSTAL GROWTH
(2024)
Article
Crystallography
Peter Rudolph
Summary: This article presents an overview of selected contributions to the development of crystal growth technology by the Laudise Prize awardee 2023. It discusses various aspects such as shaped crystal growth, the correlation between melt structure and crystal quality, control of intrinsic defects and inclusions, prevention of dislocation cell patterns, and melt growth experiments under a travelling magnetic field.
JOURNAL OF CRYSTAL GROWTH
(2024)