Effect of the hexagonal phase interlayer on rectification properties of boron nitride heterojunctions to silicon

Impact of low-energy ions on plasma deposition of cubic boron nitride

(2015) Kungen Teii et al.   THIN SOLID FILMS

Rectification properties of n-type nanocrystalline diamond heterojunctions to p-type silicon carbide at high temperatures

(2014)   APPLIED PHYSICS LETTERS

Origin of Rectification in Boron Nitride Heterojunctions to Silicon

(2013) Kungen Teii et al.   ACS Applied Materials & Interfaces

Doping and electrical properties of cubic boron nitride thin films: A critical review

(2013) X.W. Zhang   THIN SOLID FILMS

Direct Deposition of Cubic Boron Nitride Films on Tungsten Carbide–Cobalt

(2012) Kungen Teii et al.   ACS Applied Materials & Interfaces

Valence band offset at the amorphous hydrogenated boron nitride-silicon (100) interface

(2012) S. W. King et al.   APPLIED PHYSICS LETTERS

Low threshold field emission from high-quality cubic boron nitride films

(2012) Kungen Teii et al.   JOURNAL OF APPLIED PHYSICS

Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering

(2011) J. Ying et al.   JOURNAL OF APPLIED PHYSICS

Enhanced deposition of cubic boron nitride films on roughened silicon and tungsten carbide–cobalt surfaces

(2010) K. Teii et al.   THIN SOLID FILMS

Electron field emission from nanostructured cubic boron nitride islands

(2008) Kungen Teii et al.   APPLIED PHYSICS LETTERS

Electrical properties of Be-implanted polycrystalline cubic boron nitride films

(2008) B. He et al.   APPLIED PHYSICS LETTERS

Electronic transport in heavily Si doped cubic boron nitride films epitaxially grown on diamond(001)

(2008) Hong Yin et al.   JOURNAL OF APPLIED PHYSICS