Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe
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Title
Electron-phonon interaction and thermal boundary resistance at the crystal-amorphous interface of the phase change compound GeTe
Authors
Keywords
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Journal
JOURNAL OF APPLIED PHYSICS
Volume 117, Issue 1, Pages 015304
Publisher
AIP Publishing
Online
2015-01-06
DOI
10.1063/1.4904910
References
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Related references
Note: Only part of the references are listed.- Dynamical Heterogeneity in the Supercooled Liquid State of the Phase Change Material GeTe
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- Electronic and thermal transport in GeTe: A versatile base for thermoelectric materials
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- Fast Crystallization of the Phase Change Compound GeTe by Large-Scale Molecular Dynamics Simulations
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- Neural network interatomic potential for the phase change material GeTe
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- Phase-Change Materials: Vibrational Softening upon Crystallization and Its Impact on Thermal Properties
- (2011) Toshiyuki Matsunaga et al. ADVANCED FUNCTIONAL MATERIALS
- Design Rules for Phase-Change Materials in Data Storage Applications
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- Thermal characterization of the SiO2-Ge2Sb2Te5 interface from room temperature up to 400°C
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- The Impact of Thermal Boundary Resistance in Phase-Change Memory Devices
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- (2008) J. Hegedüs et al. NATURE MATERIALS
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