Tristate Memory Using Ferroelectric-Insulator-Semiconductor Heterojunctions for 50% Increased Data Storage

Polarization reversal behavior in the Pt/Pb(Zr,Ti)O3/Pt and Pt/Al2O3/Pb(Zr,Ti)O3/Pt capacitors for different reversal directions

(2010) Hyun Ju Lee et al.   APPLIED PHYSICS LETTERS

Multiferroic thin-film integration onto semiconductor devices

(2010) Reji Thomas et al.   JOURNAL OF PHYSICS-CONDENSED MATTER

The Inlaid Al2O3Tunnel Switch for Ultrathin Ferroelectric Films

(2009) An Quan Jiang et al.   ADVANCED MATERIALS

Effect of ZnO channel thickness on the device behaviour of nonvolatile memory thin film transistors with double-layered gate insulators of Al2O3and ferroelectric polymer

(2009) Sung-Min Yoon et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Control of analog ferroelectric states by small dc-bias in conjunction with fluctuating waveforms

(2009) Dan Ricinschi et al.   JOURNAL OF PHYSICS D-APPLIED PHYSICS

Enhancement of ferroelectricity at metal–oxide interfaces

(2009) Massimiliano Stengel et al.   NATURE MATERIALS

Resolving the Landauer paradox in ferroelectric switching by high-field charge injection

(2009) An-Quan Jiang et al.   PHYSICAL REVIEW B

Fundamentals of zinc oxide as a semiconductor

(2009) Anderson Janotti et al.   REPORTS ON PROGRESS IN PHYSICS

Nonvolatile Memory Using Epitaxially Grown Composite-Oxide-Film Technology

(2008) Yoshihisa Kato et al.   JAPANESE JOURNAL OF APPLIED PHYSICS