期刊
JOURNAL OF APPLIED PHYSICS
卷 118, 期 4, 页码 -出版社
AMER INST PHYSICS
DOI: 10.1063/1.4927421
关键词
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资金
- Ministry of Science and Technology, Taiwan [NSC 99-2112-M-390-002-MY3, NSC 102-2112-M-390-001, MOST 103-2112-M-390-002]
Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED. (C) 2015 AIP Publishing LLC.
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