Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation

Published 2009 View Full Article

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Title
Fabrication of high Ge content SiGe-on-insulator with low dislocation density by modified Ge condensation
Authors
Keywords
-
Journal
APPLIED SURFACE SCIENCE
Volume 255, Issue 17, Pages 7743-7748
Publisher
Elsevier BV
Online
2009-05-05
DOI
10.1016/j.apsusc.2009.04.162

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