Journal
APPLIED PHYSICS LETTERS
Volume 113, Issue 11, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.5047925
Keywords
-
Categories
Funding
- National Natural Science Foundation of China [61574090, 11374214, 10974135]
- Shanghai Rising-Star Program [17QB1402700]
- Natural Science Foundation of ShanXi Province [201601D021020]
Ask authors/readers for more resources
An ultra-low operating voltage bipolar resistive switching is observed in Ag/TaOx/Pt devices. They show a typical bipolar resistive switching with both low operating voltages and high cycling endurance when the compliance current (I-CC) is 0.3 mA. Moreover, the operating voltage is considerably influenced by the grain size of the film. The V-Forming Thing increases dramatically when the grain size exceeds a critical value. Meanwhile, the bipolar resistive switching and threshold switching in Ag/TaOx/Pt devices can be converted to each other by changing the magnitude of the I-CC. Finally, a model based on the migration of Ag+ is proposed to explain the ultra-low operating voltage and the critical effect of grain size. The model is proved by simulation. These findings may lead to ultra-low power memories and contribute to a further understanding of the resistive switching effect. Published by AIP Publishing.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available