Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C

Published 2014 View Full Article

  1. Home
  2. Publications
  3. Publication Search
  4. Publication Details
Title
Temperature sensor based on 4H-silicon carbide pn diode operational from 20 °C to 600 °C
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 104, Issue 7, Pages 073504
Publisher
AIP Publishing
Online
2014-02-19
DOI
10.1063/1.4865372
References
View 3 related references

Ask authors/readers for more resources

Protocol

Community support

Reagent

Community support

Reprint

Contact the author

Discover Peeref hubs

Discuss science. Find collaborators. Network.

Join a conversation

Create your own webinar

Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.

Create Now
Webinars Posters Questions Hubs Funding Journals Articles Connect Collections Reviewers About Us FAQs Mobile App Privacy Policy Terms of Use
© Peeref 2019-2024. All rights reserved.