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Title
GeSn p-i-n waveguide photodetectors on silicon substrates
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 23, Pages 231109
Publisher
AIP Publishing
Online
2014-12-10
DOI
10.1063/1.4903881
References
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Related references
Note: Only part of the references are listed.- Infrared photoresponse of GeSn/n-Ge heterojunctions grown by molecular beam epitaxy
- (2014) Sangcheol Kim et al. OPTICS EXPRESS
- Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection
- (2014) Benjamin R. Conley et al. OPTICS EXPRESS
- Structural and optical characteristics of Ge_1−xSnx/Ge superlattices grown on Ge-buffered Si(001) wafers
- (2014) Jia-Zhi Chen et al. Optical Materials Express
- High-responsivity GeSn short-wave infrared p-i-n photodetectors
- (2013) Dongliang Zhang et al. APPLIED PHYSICS LETTERS
- Strain relaxation and Sn segregation in GeSn epilayers under thermal treatment
- (2013) H. Li et al. APPLIED PHYSICS LETTERS
- GeSn-based p-i-n photodiodes with strained active layer on a Si wafer
- (2013) H. H. Tseng et al. APPLIED PHYSICS LETTERS
- Quantum-confined photoluminescence from Ge_1−xSn_x/Ge superlattices on Ge-buffered Si(001) substrates
- (2013) Guo-En Chang et al. OPTICS LETTERS
- GeSn p-i-n detectors integrated on Si with up to 4% Sn
- (2012) M. Oehme et al. APPLIED PHYSICS LETTERS
- GeSn/Ge heterostructure short-wave infrared photodetectors on silicon
- (2012) A. Gassenq et al. OPTICS EXPRESS
- High-Performance Near-IR Photodiodes: A Novel Chemistry-Based Approach to Ge and Ge–Sn Devices Integrated on Silicon
- (2011) Radek Roucka et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- GeSn p-i-n photodetector for all telecommunication bands detection
- (2011) Shaojian Su et al. OPTICS EXPRESS
- Investigation of Ge1-xSnx/Ge with high Sn composition grown at low-temperature
- (2011) I. S. Yu et al. AIP Advances
- Strain-Balanced ${\rm Ge}_{z}{\rm Sn}_{1-z}\hbox{--}{\rm Si}_{x}{\rm Ge}_{y}{\rm Sn}_{1-x-y}$ Multiple-Quantum-Well Lasers
- (2010) Guo-En Chang et al. IEEE JOURNAL OF QUANTUM ELECTRONICS
- Design of an electrically pumped SiGeSn/GeSn/SiGeSn double-heterostructure midinfrared laser
- (2010) G. Sun et al. JOURNAL OF APPLIED PHYSICS
- Design of a Si-based lattice-matched room-temperature GeSn/GeSiSn multi-quantum-well mid-infrared laser diode
- (2010) G. Sun et al. OPTICS EXPRESS
- Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications
- (2009) Jay Mathews et al. APPLIED PHYSICS LETTERS
- Theory for n-type doped, tensile-strained Ge–Si_xGe_ySn_1−x−y quantum-well lasers at telecom wavelength
- (2009) Guo-En Chang et al. OPTICS EXPRESS
- Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands
- (2009) Vijay R D'Costa et al. SEMICONDUCTOR SCIENCE AND TECHNOLOGY
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