Filament formation and erasure in molybdenum oxide during resistive switching cycles
Published 2014 View Full Article
- Home
- Publications
- Publication Search
- Publication Details
Title
Filament formation and erasure in molybdenum oxide during resistive switching cycles
Authors
Keywords
-
Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 17, Pages 173504
Publisher
AIP Publishing
Online
2014-10-28
DOI
10.1063/1.4898773
References
Ask authors/readers for more resources
Related references
Note: Only part of the references are listed.- In-situ transmission electron microscopy of conductive filaments in NiO resistance random access memory and its analysis
- (2013) Takashi Fujii et al. JOURNAL OF APPLIED PHYSICS
- Dynamic Evolution of Conducting Nanofilament in Resistive Switching Memories
- (2013) Jui-Yuan Chen et al. NANO LETTERS
- Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM
- (2012) Qi Liu et al. ADVANCED MATERIALS
- Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
- (2012) Stefano Larentis et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Analysis of resistance switching and conductive filaments inside Cu-Ge-S using in situ transmission electron microscopy
- (2012) Takashi Fujii et al. JOURNAL OF MATERIALS RESEARCH
- Preparation of resistance random access memory samples for in situ transmission electron microscopy experiments
- (2012) Masaki Kudo et al. THIN SOLID FILMS
- Observation of conducting filament growth in nanoscale resistive memories
- (2012) Yuchao Yang et al. Nature Communications
- In situ transmission electron microscopy analysis of conductive filament during solid electrolyte resistance switching
- (2011) Takashi Fujii et al. APPLIED PHYSICS LETTERS
- I-V measurement of NiO nanoregion during observation by transmission electron microscopy
- (2011) Takashi Fujii et al. JOURNAL OF APPLIED PHYSICS
- Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook
- (2011) Kyung Min Kim et al. NANOTECHNOLOGY
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
- (2011) Myoung-Jae Lee et al. NATURE MATERIALS
- Resistance switching properties of molybdenum oxide films
- (2011) M Arita et al. THIN SOLID FILMS
- Back-end-of-line compatible Conductive Bridging RAM based on Cu and SiO2
- (2010) Y. Bernard et al. MICROELECTRONIC ENGINEERING
- Forming and switching mechanisms of a cation-migration-based oxide resistive memory
- (2010) T Tsuruoka et al. NANOTECHNOLOGY
- Atomic structure of conducting nanofilaments in TiO2 resistive switching memory
- (2010) Deok-Hwang Kwon et al. Nature Nanotechnology
- Resistive Random Access Memory (ReRAM) Based on Metal Oxides
- (2010) Hiroyuki Akinaga et al. PROCEEDINGS OF THE IEEE
- Excellent Switching Uniformity of Cu-Doped $\hbox{MoO}_{x}/\hbox{GdO}_{x}$ Bilayer for Nonvolatile Memory Applications
- (2009) Jaesik Yoon et al. IEEE ELECTRON DEVICE LETTERS
- Study of Multilevel Programming in Programmable Metallization Cell (PMC) Memory
- (2009) Ugo Russo et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Low current resistive switching in Cu–SiO2 cells
- (2008) C. Schindler et al. APPLIED PHYSICS LETTERS
- Diffusivity of Cu Ions in Solid Electrolyte and Its Effect on the Performance of Nanometer-Scale Switch
- (2008) Naoki Banno et al. IEEE TRANSACTIONS ON ELECTRON DEVICES
- Resistive switching in transition metal oxides
- (2008) Akihito Sawa Materials Today
- Electric pulse induced resistance change effect in manganites due to polaron localization at the metal-oxide interfacial region
- (2008) Ch. Jooss et al. PHYSICAL REVIEW B
Add your recorded webinar
Do you already have a recorded webinar? Grow your audience and get more views by easily listing your recording on Peeref.
Upload NowCreate your own webinar
Interested in hosting your own webinar? Check the schedule and propose your idea to the Peeref Content Team.
Create Now