Excess carrier lifetimes in Ge layers on Si

Tensile-strained germanium microdisks

(2013) A. Ghrib et al.   APPLIED PHYSICS LETTERS

Analysis of Threshold Current Behavior for Bulk and Quantum-Well Germanium Laser Structures

(2013) Yan Cai et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Photoluminescence, recombination rate, and gain spectra in optically excited n-type and tensile strained germanium layers

(2013) M. Virgilio et al.   JOURNAL OF APPLIED PHYSICS

Analysis of enhanced light emission from highly strained germanium microbridges

(2013) M. J. Süess et al.   Nature Photonics

Radiative recombination and optical gain spectra in biaxially strainedn-type germanium

(2013) M. Virgilio et al.   PHYSICAL REVIEW B

High phosphorous doped germanium: Dopant diffusion and modeling

(2012) Yan Cai et al.   JOURNAL OF APPLIED PHYSICS

Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain

(2012) Lee Carroll et al.   PHYSICAL REVIEW LETTERS

Dielectric function model for p-type semiconductor inter-valence band transitions

(2011) Yan-Feng Lao et al.   JOURNAL OF APPLIED PHYSICS

Direct versus indirect optical recombination in Ge films grown on Si substrates

(2011) G. Grzybowski et al.   PHYSICAL REVIEW B

Ultra-broadband infrared pump-probe spectroscopy using synchrotron radiation and a tuneable pump

(2011) Lee Carroll et al.   REVIEW OF SCIENTIFIC INSTRUMENTS

Band structure and optical gain of tensile-strained germanium based on a 30 band k⋅p formalism

(2010) Moustafa El Kurdi et al.   JOURNAL OF APPLIED PHYSICS

Ge-on-Si laser operating at room temperature

(2010) Jifeng Liu et al.   OPTICS LETTERS