Direct versus indirect optical recombination in Ge films grown on Si substrates
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Title
Direct versus indirect optical recombination in Ge films grown on Si substrates
Authors
Keywords
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Journal
PHYSICAL REVIEW B
Volume 84, Issue 20, Pages -
Publisher
American Physical Society (APS)
Online
2011-11-15
DOI
10.1103/physrevb.84.205307
References
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Related references
Note: Only part of the references are listed.- Influence of defects and interface on radiative transition of Ge
- (2011) S.-R. Jan et al. APPLIED PHYSICS LETTERS
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- (2011) R. Roucka et al. APPLIED PHYSICS LETTERS
- Synthesis and Materials Properties of Sn/P-Doped Ge on Si(100): Photoluminescence and Prototype Devices
- (2011) Richard T. Beeler et al. CHEMISTRY OF MATERIALS
- Complementary metal-oxide semiconductor-compatible detector materials with enhanced 1550 nm responsivity via Sn-doping of Ge/Si(100)
- (2011) Radek Roucka et al. JOURNAL OF APPLIED PHYSICS
- Photoluminescence study of Ge containing crystal defects
- (2011) Martin Kittler et al. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE
- Competitiveness between direct and indirect radiative transitions of Ge
- (2010) T.-H. Cheng et al. APPLIED PHYSICS LETTERS
- Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon
- (2010) J. Mathews et al. APPLIED PHYSICS LETTERS
- Ge-on-Si laser operating at room temperature
- (2010) Jifeng Liu et al. OPTICS LETTERS
- Ambient stability of wet chemically passivated germanium wafer for crystalline solar cells
- (2010) Bibhu P. Swain et al. SOLAR ENERGY MATERIALS AND SOLAR CELLS
- Enhanced photoluminescence of heavily n-doped germanium
- (2009) M. El Kurdi et al. APPLIED PHYSICS LETTERS
- Direct gap photoluminescence of n-type tensile-strained Ge-on-Si
- (2009) Xiaochen Sun et al. APPLIED PHYSICS LETTERS
- Room temperature 16 μm electroluminescence from Ge light emitting diode on Si substrate
- (2009) Szu-Lin Cheng et al. OPTICS EXPRESS
- Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes
- (2009) Xiaochen Sun et al. OPTICS LETTERS
- Near-infrared absorption of germanium thin films on silicon
- (2008) V. Sorianello et al. APPLIED PHYSICS LETTERS
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