Mid-infrared interband cascade light emitting devices with milliwatt output powers at room temperature

Monomode Interband Cascade Lasers at 5.2 $\mu{\rm m}$ for Nitric Oxide Sensing

(2014) Michael von Edlinger et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Pulsed and CW performance of 7-stage interband cascade lasers

(2014) Chadwick L. Canedy et al.   OPTICS EXPRESS

High-power, high-brightness continuous-wave interband cascade lasers with tapered ridges

(2013) W. W. Bewley et al.   APPLIED PHYSICS LETTERS

512$\,\times\,$512 Individually Addressable MWIR LED Arrays Based on Type-II InAs/GaSb Superlattices

(2013) Dennis T. Norton et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

Interband Cascade Lasers With Low Threshold Powers and High Output Powers

(2013) I. Vurgaftman et al.   IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS

Interband cascade lasers with AlGaAsSb bulk cladding layers

(2013) Robert Weih et al.   Optical Materials Express

Enhanced Performance of LWIR LED Devices by Backside Thinning and Isolating the Pixels

(2012) Naresh C. Das   IEEE TRANSACTIONS ON ELECTRON DEVICES

Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

(2011) B. A. Ikyo et al.   APPLIED PHYSICS LETTERS

Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption

(2011) I. Vurgaftman et al.   Nature Communications

Dual wavelength GaSb based type I quantum well mid-infrared light emitting diodes

(2010) Seungyong Jung et al.   APPLIED PHYSICS LETTERS

LEDs (λmax = 3.6 μm) with cone-shaped light-emitting surfaces

(2010) E. A. Grebenshchikova et al.   TECHNICAL PHYSICS LETTERS

Corrugated-sidewall interband cascade lasers with single-mode midwave-infrared emission at room temperature

(2009) C. S. Kim et al.   APPLIED PHYSICS LETTERS

High-Power MWIR Cascaded InAs–GaSb Superlattice LEDs

(2009) Edwin J. Koerperick et al.   IEEE JOURNAL OF QUANTUM ELECTRONICS

GaSb-Based Type I Quantum-Well Light-Emitting Diode Addressable Array Operated at Wavelengths Up to 3.66 $\mu$m

(2009) Seungyong Jung et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

GaSb based light emitting diodes with strained InGaAsSb type I quantum well active regions

(2008) Sergey Suchalkin et al.   APPLIED PHYSICS LETTERS

High-power, narrow-ridge, mid-infrared interband cascade lasers

(2008) C. L. Canedy et al.   JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B

Sources of spontaneous emission based on indium arsenide

(2008) N. V. Zotova et al.   SEMICONDUCTORS