Temperature dependence of 4.1 μm mid-infrared type II “W” interband cascade lasers

Optical properties of GaSb-based type II quantum wells as the active region of midinfrared interband cascade lasers for gas sensing applications

(2009) M. Motyka et al.   APPLIED PHYSICS LETTERS

Room temperature operated 3.1μm type-I GaSb-based diode lasers with 80mW continuous-wave output power

(2008) L. Shterengas et al.   APPLIED PHYSICS LETTERS

Lifetimes and Auger coefficients in type-II W interband cascade lasers

(2008) W. W. Bewley et al.   APPLIED PHYSICS LETTERS

Interband cascade laser emitting at λ=3.75μm in continuous wave above room temperature

(2008) M. Kim et al.   APPLIED PHYSICS LETTERS

Gain, loss, and internal efficiency in interband cascade lasers emitting at λ=3.6–4.1μm

(2008) W. W. Bewley et al.   JOURNAL OF APPLIED PHYSICS

Evidence of carrier leakage into the L-valley in InAs-based quantum cascade lasers under high hydrostatic pressure

(2008) Igor P. Marko et al.   PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS