Bias-dependence of the tunneling electroresistance and magnetoresistance in multiferroic tunnel junctions
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Title
Bias-dependence of the tunneling electroresistance and magnetoresistance in multiferroic tunnel junctions
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 105, Issue 10, Pages 102403
Publisher
AIP Publishing
Online
2014-09-10
DOI
10.1063/1.4895537
References
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Related references
Note: Only part of the references are listed.- Bias dependence of tunneling magnetoresistance in magnetic tunnel junctions with asymmetric barriers
- (2013) Alan Kalitsov et al. JOURNAL OF PHYSICS-CONDENSED MATTER
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- Solid-state memories based on ferroelectric tunnel junctions
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- Vertical-current-induced domain-wall motion in MgO-based magnetic tunnel junctions with low current densities
- (2011) A. Chanthbouala et al. Nature Physics
- Multi-ferroic and magnetoelectric materials and interfaces
- (2011) J. P. Velev et al. PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY A-MATHEMATICAL PHYSICAL AND ENGINEERING SCIENCES
- Organic Multiferroic Tunnel Junctions with Ferroelectric Poly(vinylidene fluoride) Barriers
- (2010) Juan M. López-Encarnación et al. NANO LETTERS
- Effect of spin-dependent screening on tunneling electroresistance and tunneling magnetoresistance in multiferroic tunnel junctions
- (2010) M. Ye. Zhuravlev et al. PHYSICAL REVIEW B
- Ferroelectric Control of Spin Polarization
- (2010) V. Garcia et al. SCIENCE
- Giant tunnel electroresistance for non-destructive readout of ferroelectric states
- (2009) V. Garcia et al. NATURE
- Spin-transfer torque in magnetic tunnel junctions
- (2009) Alan Kalitsov et al. PHYSICAL REVIEW B
- Polarization Control of Electron Tunneling into Ferroelectric Surfaces
- (2009) P. Maksymovych et al. SCIENCE
- Magnetic Tunnel Junctions with Ferroelectric Barriers: Prediction of Four Resistance States from First Principles
- (2008) Julian P. Velev et al. NANO LETTERS
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