Electrical characteristics and thermal stability of HfO2 metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

(2012) Laura B. Ruppalt et al.   APPLIED PHYSICS LETTERS

Study of Direct-Contact HfO2/Si Interfaces

(2012) Noriyuki Miyata   Materials

GaSb Metal-Oxide-Semiconductor Capacitors with Atomic-Layer-Deposited HfAlO as Gate Dielectric

(2011) Chen Wang et al.   ELECTROCHEMICAL AND SOLID STATE LETTERS

GaSb Inversion-Mode PMOSFETs With Atomic-Layer-Deposited $\hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectric

(2011) Min Xu et al.   IEEE ELECTRON DEVICE LETTERS

Optimization of the $\hbox{Al}_{2}\hbox{O}_{3}/ \hbox{GaSb}$ Interface and a High-Mobility GaSb pMOSFET

(2011) Aneesh Nainani et al.   IEEE TRANSACTIONS ON ELECTRON DEVICES

Nanometre-scale electronics with III–V compound semiconductors

(2011) Jesús A. del Alamo   NATURE

Fermi level unpinning of GaSb (100) using plasma enhanced atomic layer deposition of Al2O3

(2010) A. Ali et al.   APPLIED PHYSICS LETTERS

The Fermi-level efficiency method and its applications on high interface trap density oxide-semiconductor interfaces

(2009) H. C. Lin et al.   APPLIED PHYSICS LETTERS

Influence of initial surface reconstruction on the interface structure of HfO2/GaAs

(2008) Tetsuji Yasuda et al.   APPLIED SURFACE SCIENCE

Staircase model of GaSb(001)(1×3)andc(2×6)phases

(2008) O. Romanyuk et al.   PHYSICAL REVIEW B