Article
Optics
Ryan Anderson, Haojun Zhang, Emily Trageser, Nathan Palmquist, Matt Wong, Shuji Nakamura, Steven DenBaars
Summary: Green GaN lasers with emission wavelength at 510 nm were successfully fabricated using novel nano-porous GaN cladding under pulsed electrical injection. The low slope efficiency and high threshold current density were attributed to poor injection efficiency and high loss. The independent characterization methods of variable stripe length and segmented contacts were used to analyze the laser performance, and it was found that continuous wave operation resulted in narrowed spectra and enhanced spontaneous emission.
Article
Physics, Applied
Ah Hyun Park, Seungjae Baek, Go Bong Choi, Yoong Ahm Kim, Jinsub Lim, Tae Hoon Seo
Summary: In this study, green light emitting diodes (LEDs) with Au nanoclusters in a micro-hole patterned p-GaN layer (ANCs-MHPP) were demonstrated to have higher internal quantum efficiencies and faster decay times compared to conventional green LEDs. The remarkable opto-electronic performance of green LEDs with ANCs-MHPP is attributed to exciton-surface plasmon coupling and surface texturing effect caused by the micro-hole patterned p-GaN layer.
APPLIED PHYSICS LETTERS
(2021)
Review
Materials Science, Multidisciplinary
Muhammad Usman, Munaza Munsif, Urooj Mushtaq, Abdur-Rehman Anwar, Nazeer Muhammad
Summary: Efficiency issues in green light-emitting diodes are a major concern in the solid-state lighting industry. Researchers are exploring methods to address this issue by reducing inherent problems such as defect density and internal electric fields in order to improve the performance of green light-emitting diodes.
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES
(2021)
Article
Optics
Zhe Zhuang, Daisuke Iida, Martin Velazquez-Rizo, Kazuhiro Ohkawa
Summary: The study introduced a method for fabricating ultra-small InGaN μLEDs, successfully realizing different shapes of green μLEDs. It was found that as the size of the μLED decreases, the series resistance and turn-on voltage increase, while the light output power density and external quantum efficiency also improve.
Article
Chemistry, Physical
Rahul Kumar, Samir K. Saha, Andrian Kuchuk, Yurii Maidaniuk, Fernando Maia de Oliveira, Qigeng Yan, Mourad Benamara, Yuriy Mazur, Shui-Qing Yu, Gregory J. Salamo
Summary: High-quality cubic GaAs buffer layers have been successfully grown on an atomically flat c-plane trigonal sapphire substrate using a two-step growth method with an AlAs nucleation layer and multiple annealing steps. Epitaxially growing InGaAs quantum wells on the GaAs buffer layer demonstrated comparable photoluminescence intensity and linewidth to quantum wells grown on GaAs substrates, confirming the effectiveness of the growth strategies for producing high-quality GaAs on sapphire.
APPLIED SURFACE SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Lei Cai, Jungui Zhou, Guilin Bai, Jiaqing Zang, Abdelhamid El-Shaer, Tao Song, Man-Keung Fung, Baoquan Sun
Summary: Strategies have been developed to suppress the microcavity effect in transparent and top-emitting PeLEDs by enhancing electrode transmission and extending the optical cavity length. A record high total external quantum efficiency (EQE) of 16.1% in a transparent PeLED with Lambertian emission was achieved by depositing high refractive index molybdenum oxide on the semitransparent cathode. Additionally, a high EQE of 13.6% was achieved in a top-emitting device with quasi-Lambertian emission by increasing the optical distance between reflective layers and enhancing electrode transmission. The nanopatterned structure effectively suppressed waveguide mode and surface plasmon polariton dilapidation in top-emitting PeLEDs, paving the way for potential applications in both traditional and novel transparent displays.
ADVANCED OPTICAL MATERIALS
(2022)
Article
Optics
Xing Yan, Xun Hu, Rui Zhou, Na Gao, Yuchao Yao, Yujie Gao, Junyong Kang
Summary: This study investigates the effect of SiO2 passivation layer on the performance of green micro-LEDs through simulation and experiments. The results show that an appropriate thickness of SiO2 passivation layer can significantly improve the external quantum efficiency of micro-LEDs.
Review
Optics
Runnan Yu, Changxiao Li, Biao Zhao, Zhan'ao Tan
Summary: This work reviews the research history of green perovskite light-emitting diodes (GPeLEDs), introduces perovskites of different dimensions, and discusses the common synthesis methods of perovskites. Additionally, strategies to improve the stability and luminous efficiency of GPeLEDs are summarized, including component engineering, phase engineering, ligand engineering, additive engineering, interface engineering, and optical coupling structure strategy. Finally, the development state of GPeLEDs is summarized and future prospects are discussed.
LASER & PHOTONICS REVIEWS
(2023)
Article
Chemistry, Physical
Zhaoping Chen, Qin Wang, Yao Tong, Xiaoting Liu, Jialong Zhao, Biaolin Peng, Ruosheng Zeng, Shuang Pan, Bingsuo Zou, Weidong Xiang
Summary: This study presents a simple strategy for producing flexible films containing CsPbBr3 PNG, achieving tunable green emission and expanding the color gamut of whitelight-emitting sources. The prepared PNG films exhibit excellent performance, showing promise for practical applications in ultra-high-definition displays.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Chemistry, Physical
Zhaoping Chen, Qin Wang, Yao Tong, Xiaoting Liu, Jialong Zhao, Biaolin Peng, Ruosheng Zeng, Shuang Pan, Bingsuo Zou, Weidong Xiang
Summary: A facile strategy for producing flexible films containing CsPbBr3 nanocrystals has been reported, allowing for large-area coverage of white-light emission. These films exhibit excellent performance and are suitable for practical ultra-high-definition displays.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2022)
Article
Optics
Yijian Zhou, Wenbo Peng, Guojiao Xiang, Yue Liu, Jiahui Zhang, Jinming Zhang, Rong Li, Xuefeng Zhu, Hui Wang, Yang Zhao
Summary: A high-quality CsPbBr3 film with excellent optical properties was obtained, and a p-NiO/CsPbBr3/n-GaN heterojunction diode with excellent electrical and luminous properties was prepared. The study also found that temperature has a significant impact on the luminous properties of the diode, indicating its potential application in the field of luminescence.
JOURNAL OF LUMINESCENCE
(2023)
Article
Chemistry, Physical
Do-Yeong Shin, Taehwan Kim, Ozgun Akyuz, Hilmi Volkan Demir, In-Hwan Lee
Summary: This study presents an improved efficiency design for white LEDs by integrating blue nanorod LEDs with green and red-emitting perovskite nanocrystal films. The design utilizes the localized surface plasmon effect of Ag@SiO2 nanoparticles to enhance the photoluminescence intensity of blue LEDs, while the high-power blue LED backlight improves the perovskite photoluminescence intensity. The resulting white LED with Ag@SiO2 nanoparticle-embedded nanorods demonstrates a 62% increase in photoluminescence intensity compared to planar white LEDs.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Review
Chemistry, Physical
Taesoo Lee, Minhyung Lee, Hansol Seo, Minjun Kim, Beomsoo Chun, Jeonghun Kwak
Summary: This review summarizes previous studies on top-emitting device structures and discusses ways to improve the performance of top-emitting quantum dot-based light-emitting diodes (TQLEDs). The relevant theories for the optoelectrical properties of TQLEDs are introduced, and advancements in device optimization are presented. Multilateral strategies for TQLEDs to be widely applied in advanced industries are also discussed. This review aims to provide valuable insights for realizing commercial TQLEDs applicable to a broad range of applications.
Article
Engineering, Electrical & Electronic
Jian-Bin Kang, Qian Li, Xiang Fu, Fei-Liang Chen, Mo Li
Summary: Neutron irradiation effects on GaN-based multiquantum well light-emitting diodes (LEDs) with different emission wavelengths were studied. The optical output power, current-voltage characteristics, and peak wavelength were analyzed before and after irradiation. The increase in optical output power of the LEDs was attributed to the increase in carrier injection, but the degradation in performance was mainly caused by the formation of tunneling conductivity channels in the electron block layer induced by neutrons. Among the three colors of LEDs, green LEDs were the most severely affected due to their poor carrier confinement in shallow GaN/AlGaN MQWs.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
(2023)
Article
Optics
Shengjun Zhou, Zehong Wan, Yu Lei, Bin Tang, Guoyi Tao, Peng Du, Xiaoyu Zhao
Summary: This study proposes the use of InGaN quantum wells with gradually varying indium content to enhance the performance of GaN-based green LEDs. Experimental results demonstrate that green LEDs with gradually varying indium content exhibit higher light output power and lower efficiency droop.
Article
Chemistry, Multidisciplinary
Hailiang Dong, Jing Sun, Shufang Ma, Jian Liang, Taiping Lu, Xuguang Liu, Bingshe Xu
Article
Physics, Condensed Matter
Lin Shang, Guangmei Zhai, Zhigang Jia, Fuhong Mei, Taiping Lu, Xuguang Liu, Bingshe Xu
PHYSICA B-CONDENSED MATTER
(2016)
Article
Nanoscience & Nanotechnology
Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, Bingshe Xu
NANOSCALE RESEARCH LETTERS
(2017)
Article
Nanoscience & Nanotechnology
Xiaorun Zhou, Taiping Lu, Yadan Zhu, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Yongzhen Yang, Yongkang Chen, Bingshe Xu
NANOSCALE RESEARCH LETTERS
(2017)
Article
Physics, Condensed Matter
Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, Bingshe Xu
SUPERLATTICES AND MICROSTRUCTURES
(2017)
Article
Physics, Condensed Matter
Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, Bingshe Xu
SUPERLATTICES AND MICROSTRUCTURES
(2017)
Article
Nanoscience & Nanotechnology
Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, Bingshe Xu
NANOSCALE RESEARCH LETTERS
(2017)
Article
Nanoscience & Nanotechnology
Xiaorun Zhou, Taiping Lu, Yadan Zhu, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Yongzhen Yang, Yongkang Chen, Bingshe Xu
NANOSCALE RESEARCH LETTERS
(2017)
Article
Chemistry, Multidisciplinary
Zhaoxia Bi, Filip Lenrick, Jovana Colvin, Anders Gustafsson, Olof Hultin, Ali Nowzari, Taiping Lu, Reine Wallenberg, Rainer Timm, Anders Mikkelsen, B. Jonas Ohlsson, Kristian Storm, Bo Monemar, Lars Samuelson
Article
Chemistry, Multidisciplinary
Yanning Zheng, Jingxia Zheng, Junli Wang, Yongzhen Yang, Taiping Lu, Xuguang Liu
Article
Nanoscience & Nanotechnology
Zhaoxia Bi, Taiping Lu, Jovana Colvin, Elis Sjogren, Neimantas Vainorius, Anders Gustafsson, Jonas Johansson, Rainer Timm, Filip Lenrick, Reine Wallenberg, Bo Monemar, Lars Samuelson
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Engineering, Electrical & Electronic
Zhigang Jia, Xiaodong Hao, Taiping Lu, Hailiang Dong, Zhiwei Jia, Aiqin Zhang, Shufang Ma, Jian Liang, Wei Jia, Tianbao Li, Bingshe Xu
Summary: Different period numbers of InGaN/GaN quantum wells were grown and characterized, showing a relationship between strain, VPs density, In-rich QDs formation, and internal quantum efficiency.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Multidisciplinary
Zhigang Jia, Xiaodong Hao, Taiping Lu, Hailiang Dong, Zhiwei Jia, Shufang Ma, Jian Liang, Wei Jia, Bingshe Xu
Proceedings Paper
Computer Science, Hardware & Architecture
Kai Qu, Hailiang Dong, Jianjie Liu, Gangzhi Jia, M. Shufang, Jian Liang, Taiping Lu, Bingshe Xu
2018 15TH CHINA INTERNATIONAL FORUM ON SOLID STATE LIGHTING: INTERNATIONAL FORUM ON WIDE BANDGAP SEMICONDUCTORS CHINA (SSLCHINA: IFWS)
(2018)
Article
Physics, Applied
Yadan Zhu, Taiping Lu, Xiaorun Zhou, Guangzhou Zhao, Hailiang Dong, Zhigang Jia, Xuguang Liu, Bingshe Xu
APPLIED PHYSICS EXPRESS
(2017)
