Modulating emission intensity of GaN-based green light emitting diodes on c-plane sapphire

Advantages of GaN based light-emitting diodes with a p-InGaN hole reservoir layer

(2012) Taiping Lu et al.   APPLIED PHYSICS LETTERS

Hole transport improvement in InGaN/GaN light-emitting diodes by graded-composition multiple quantum barriers

(2011) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers

(2011) Bo-Chun Chen et al.   IEEE PHOTONICS TECHNOLOGY LETTERS

Hole injection and efficiency droop improvement in InGaN/GaN light-emitting diodes by band-engineered electron blocking layer

(2010) C. H. Wang et al.   APPLIED PHYSICS LETTERS

Efficient hole transport in asymmetric coupled InGaN multiple quantum wells

(2009) Jiang-Yong Zhang et al.   APPLIED PHYSICS LETTERS

Reduction of efficiency droop in InGaN light emitting diodes by coupled quantum wells

(2008) Xianfeng Ni et al.   APPLIED PHYSICS LETTERS

Barrier effect on hole transport and carrier distribution in InGaN∕GaN multiple quantum well visible light-emitting diodes

(2008) J. P. Liu et al.   APPLIED PHYSICS LETTERS