Phase-change material Ge0.61Sb2Te for application in high-speed phase change random access memory

Investigation of the Structural and Optical Properties of Ge-doped SbTe Films with Various Sb:Te Ratios

(2011) Tae Dong Kang et al.   JOURNAL OF THE ELECTROCHEMICAL SOCIETY

Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory

(2011) Yifeng Gu et al.   SCRIPTA MATERIALIA

Electrical Behavior of Phase-Change Memory Cells Based on GeTe

(2010) Luca Perniola et al.   IEEE ELECTRON DEVICE LETTERS

Low-Consumption Phase Change Material with Good Data Retention Selected from SbxTe

(2010) Yifeng Gu et al.   JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY

Ga2Te3Sb5-A Candidate for Fast and Ultralong Retention Phase-Change Memory

(2009) Kin-Fu Kao et al.   ADVANCED MATERIALS

Phase change memory cell using tungsten trioxide bottom heating layer

(2008) Feng Rao et al.   APPLIED PHYSICS LETTERS