Journal
SCRIPTA MATERIALIA
Volume 65, Issue 7, Pages 622-625Publisher
PERGAMON-ELSEVIER SCIENCE LTD
DOI: 10.1016/j.scriptamat.2011.06.045
Keywords
Phase-change material; Phase-change memory; SixSb2Te; Ge2Sb2Te5
Categories
Funding
- National Integrate Circuit Research Program of China [2009ZX02023-0 03]
- National Basic Research Program of China [2007CB935400, 2010CB934300, 2011CB309602, 2011CB932800]
- National Natural Science Foundation of China [61006087, 60906004, 60906003, 61076121]
- Science and Technology Council of Shanghai [09QH1402600, 1052nm07000]
Ask authors/readers for more resources
Si-doped Sb2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb2Te needs a lower phase-change operating voltage than Ge2Sb2Te5. For the storage of data for 10 years, Si0.53Sb2Te needs an annealing temperature that is about 24 degrees C higher than for Ge2Sb2Te5. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline SixSb2Te series has a delta-phase with a rhombohedral crystalline structure, similar to the pure Sb2Te. Crown Copyright (C) 2011 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available
Share Paper
