Temperature-dependent photoluminescence of Ge/Si and Ge1-ySny/Si, indicating possible indirect-to-direct bandgap transition at lower Sn content

Influence of defects and interface on radiative transition of Ge

(2011) S.-R. Jan et al.   APPLIED PHYSICS LETTERS

Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy

(2011) J. Werner et al.   APPLIED PHYSICS LETTERS

Undoped and in-situ B doped GeSn epitaxial growth on Ge by atmospheric pressure-chemical vapor deposition

(2011) B. Vincent et al.   APPLIED PHYSICS LETTERS

Direct gap electroluminescence from Si/Ge1−ySny p-i-n heterostructure diodes

(2011) R. Roucka et al.   APPLIED PHYSICS LETTERS

Photoluminescence from heavily doped GeSn:P materials grown on Si(100)

(2011) G. Grzybowski et al.   APPLIED PHYSICS LETTERS

Direct versus indirect optical recombination in Ge films grown on Si substrates

(2011) G. Grzybowski et al.   PHYSICAL REVIEW B

Direct and indirect radiative recombination from Ge

(2011) C.W. Liu et al.   THIN SOLID FILMS

Competitiveness between direct and indirect radiative transitions of Ge

(2010) T.-H. Cheng et al.   APPLIED PHYSICS LETTERS

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

(2010) J. Mathews et al.   APPLIED PHYSICS LETTERS

Practical Materials Chemistry Approaches for Tuning Optical and Structural Properties of Group IV Semiconductors and Prototype Photonic Devices

(2010) J Kouvetakis et al.   IEEE Photonics Journal

Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

(2009) Xiaochen Sun et al.   APPLIED PHYSICS LETTERS

Photoluminescence from Si-capped GeSn nanodots on Si substrates formed using an ultrathin SiO2 film technique

(2009) Yoshiaki Nakamura et al.   JOURNAL OF APPLIED PHYSICS

Sn-alloying as a means of increasing the optical absorption of Ge at theC- andL-telecommunication bands

(2009) Vijay R D'Costa et al.   SEMICONDUCTOR SCIENCE AND TECHNOLOGY

Origin of the unusually large band-gap bowing and the breakdown of the band-edge distribution rule in theSnxGe1−xalloys

(2008) Wan-Jian Yin et al.   PHYSICAL REVIEW B