Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
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Title
Single domain Bi2Se3 films grown on InP(111)A by molecular-beam epitaxy
Authors
Keywords
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Journal
APPLIED PHYSICS LETTERS
Volume 102, Issue 15, Pages 151604
Publisher
AIP Publishing
Online
2013-04-20
DOI
10.1063/1.4802797
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Related references
Note: Only part of the references are listed.- Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
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- (2011) Z.Y. Wang et al. JOURNAL OF CRYSTAL GROWTH
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- (2011) Minhao Liu et al. PHYSICAL REVIEW B
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- Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
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- Angular-dependent oscillations of the magnetoresistance inBi2Se3due to the three-dimensional bulk Fermi surface
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- (2010) J. Chen et al. PHYSICAL REVIEW LETTERS
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- Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
- (2010) Marco Bianchi et al. Nature Communications
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- Observation of a large-gap topological-insulator class with a single Dirac cone on the surface
- (2009) Y. Xia et al. Nature Physics
- Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface
- (2009) Haijun Zhang et al. Nature Physics
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